A step-wise process is disclosed for the efficient deposition of silicon. The process begins by reacting trichlorosilane and hydrogen on a heated substrate to deposit silicon. Silicon deposition efficiency of this reaction is determined by measuring the silicon to chlorine ratio in the deposition reaction effluent. The silicon-bearing effluent from the deposition reaction includes trichlorosilane, dichlorosilane, and silicon tetrachloride. The silicon-bearing effluent is collected in a first acc...

An article having a multiphase composite lubricant coating of a hard refractory matrix phase of titanium nitride dispersed with particles of a solid lubricating phase of molybdenum disulfide is prepared by heating the article to temperatures between 350.degree. and 850.degree. C. in a reaction vessel at a reduced pressure and passing a gaseous mixture of Ti((CH.sub.3).sub.2 N).sub.4, MoF.sub.6, H.sub.2 S and NH.sub.3 over the heated article forming a multiphase composite lubricant coating on the...

Silica granules made up of mutually agglomerated silica soot particles are treated by placing the granules in a crucible inside a furnace which contains an inert gas mixed with a chlorine-containing compound and in which the temperature lies in the range 1000.degree. C. to 1500.degree. C. According to the invention, a crucible is used that is made of porous graphite firstly to increase the surface area of the crucible through which the chlorine-containing compound diffuses. This gives rise to fa...

Inner and outer surfaces of structural components are aluminized by an aluminum gas diffusion process. For this purpose a gas mixture of a halogenous gas, aluminum monohalide gas, hydrogen, and negligible proportions of aluminum trihalide gas is caused to flow over the outer and inner surfaces of the component to be coated. The process is performed in a vessel in which at least two different temperature zones are maintained for keeping one or more aluminum sources at a higher temperature than th...

Using a GaN growth furnace, at least three different techniques can be used for forming the targets for the deposition of thin films. In the first, nitrides can be deposited as a dense coating on a target backing plate for use as a target. In this approach, the backing plate is placed near the Group III metal. During processing, the Group III metal or metal halide vaporizes and reacts with the nitrogen source to deposit a dense polycrystalline layer on the backing plate. To build up a thick laye...

Modifications to the surface of polyvinyl alcohol-based films are disclosed that result in improved adhesion to optical materials. Specifically, the surface chemistry of the polyvinyl alcohol-based film is altered to include fluorine bonds, which surprisingly improve direct adhesion of the film to materials such as optical thermoset resins, without the use of additional coatings or multilayer sandwich construction. Embodiments of this invention for incorporation of polarizer films in thermoset r...

The present invention involves the use of organocalcium precursors for the chemical vapor deposition of thin CaF.sub.2 films under exceptionally mild conditions. This method is based on utilizing an organocalcium compound and a source of fluorine in a chemical vapor deposition reaction to form CaF.sub.2.

A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

A film deposition method and film deposition system for depositing a halogen compound film, capable of depositing such a film while suppressing abuse that occurs due to deficiency of a halogen element even if the halogen element is dissociated from a film material. The halogen compound film is deposited through a process including: evaporating a film material comprising a halogen compound by means of an evaporation source 3; ionizing the evaporated film material with a radio frequency power outp...

In a method for vapor-depositing a substrate with a layer of a needle-shaped x-ray fluorescent material containing at least one alkali metal, alkali halide phases and an alkali halide are mixed in a vapor phase and are vapor-deposited on the substrate. A needle-shaped fluorescent material is thereby produced having the formula'.times.'.times.''.times.''.times..times..times.'.times..times.'.t- imes..times.'''.times.''.times..times.''.times..times.'''.times.'.times..t- imes.''.times..times.'''.tim...