A base member is disposed in a reaction chamber and a raw material gas is introduced thereinto which contains at least a compound gas of a first magnetic material, or the compound gas of the first magnetic material and an oxidizing or nitriding gas, or the compound gas of the first magnetic material and a compound gas of a second magnetic material. A plasma generating electrical energy is applied to the raw material gas to obtain therein a stream of plasma of the raw material gas, by which a str...

A manufacturing method of a photoelectric conversion device which comprises a plurality n of semiconductor elements U.sub.1 to U.sub.n formed on a substrate side by side and connected in series one after another. On the substrate a first conductive layer is formed and then, it is subjected to first laser beam scanning to form groove G.sub.1 to G.sub.n-1 and first electrode E.sub.1 to E.sub.n respectively separated by the grooves G.sub.1 to G.sub.n-1. Next, on the substrate a N (or P) -I- P (or N...

A photoelectric conversion device has a non-single-crystal semiconductor laminate member formed on a substrate having a conductive surface, and a conductive layer formed on the non-single-crystal semiconductor laminate member. The non-single-crystal semiconductor laminate member has such a structure that a first non-single-crystal semiconductor layer having a P or N first conductivity type, an I-type second non-single-crystal semiconductor layer and a third non-single-crystal semiconductor layer...

A photoelectric conversion device in which a plurality n (n being an integer larger than one) of semiconductor elements U.sub.1 to U.sub.n are sequentially formed on a substrate in a side-by-side relation and connected in series one after another. The substrate is formed by an insulating sheet-like member having an insulating film formed on a flexible metallic sheet-like member. The element U.sub.i (i=1, 2, . . . n) has a first electrode E.sub.i, a non-single-crystal semiconductor laminate membe...

A photo-chemical vapor deposition of a silicon nitride (Si.sub.3 N.sub.4) film which includes the step of irradiating a gas mixture of monosilane (or polysilane) and ammonia (NH.sub.3) or hydrazine (N.sub.2 H.sub.4) gas but without mercury vapor by ultraviolet light having a wavelength of 200 nm (or 300 nm) or less to deposit the silicon nitride (Si.sub.3 N.sub.4) film having a charge density of 1.times.10.sup.11 cm.sup.-2 or less on a substrate held at 100.degree.-500.degree. C. in a reaction c...

A plurality n of semiconductor elements U.sub.i to U.sub.n are sequentially formed on a substrate side by side and connected in series. The element U.sub.i (where i=1, 2, . . . n) has a first electrode E.sub.i formed on the substrate, a non-single-crystal semiconductor laminate member Q.sub.i formed on the electrode E.sub.i and a second electrode F.sub.i formed on the laminate member Q.sub.i. The electrode F.sub.j+1 (j=1, 2, . . . (n-1) is coupled with the electrode E.sub.j via a coupling portio...

A photoelectric conversion device in which a plurality n (n being an integer large than one) of semiconductor elements U.sub.1 to U.sub.n are sequentially formed on a substrate in a side-by-side relation and connected in series one after another. The substrate is formed by an insulating sheet-like member having an insulating film formed on a flexible metallic sheet-like member. The element U.sub.i (i=1, 2, . . . n) has a first electrode E.sub.i, a non-single-crystal semiconductor laminate member...

A substrate introducing chamber, a reaction chamber and a substrate removing chamber are sequentially arranged with a shutter between adjacent ones of them. One or more substrates are mounted on a holder with their surfaces lying in vertical planes and carried into the substrate introducing chamber, the reaction chamber and the substrate removing chamber one after another. In the reaction chamber, a material gas is guided by gas guides to flow along the substrate surfaces in a limited space in w...

A refined reactive gas is obtained by repeating more than once a step of liquefying a reactive gas and gasifying the liquefied gas in a liquefying and gasifying receptacle. Prior to the liquefaction-gasification step, cleaning treatment of the liquefying and gasifying receptacle thereinto hydrogen and then evacuating the receptacle.

A plurality n of semiconductor elements U.sub.i to U.sub.n are sequentially formed on a substrate side by side and connected in series. The element U.sub.i (where i=1, 2, . . . n) has a first electrode E.sub.i formed on the substrate, a non-single-crystal semiconductor laminate member Q.sub.i formed on the electrode E.sub.i and a second electrode F.sub.i formed on the laminate member Q.sub.i. The electrode F.sub.j+1 (j=1, 2, . . . (n-1)) is coupled with the electrode E.sub.j via a coupling porti...