An integrated circuit, such as a SRAM cell (130), including an inverted FinFET transistor (P2) and a FinFET transistor (N3). The inverted FinFET transistor includes a first gate region (108) formed by semiconductor structure (100) on a substrate, a first body region comprised of a semiconductor layer (104), having a first channel region (112) disposed on the first gate region and a source (110) and drain (114) formed on either side of the first channel region. The FinFET transistor (N3) is coupl...

A method is provided to speed up timing optimization after placement by parallelizing the optimization step. The method includes performing multiple partitions in the set of timing critical paths such that each partition can be optimized independently in a separate processor. To eliminate the need for inter-processor communication, conditions of timing independence and physical independence are imposed on each partition, thereby defining sub-sets of endpoints and paths associated therewith. The ...

A method is described for dynamic stitching of a new module of executable code in a parallel processing environment, where access to a data object is shared by the new module and another module previously loaded. A new data object is created for shared access by the new module and by the other module; a data freshness indicator is updated in accordance therewith. A pointer value for the data pointer associated with the other module is modified, thereby terminating reference to an old data object...

A method is described for making elevated sidewall spacers on the gate structure of a semiconductor device. A first insulating layer is deposited on the substrate, so that an upper portion of each of the sidewalls extends above the layer. A second insulating layer is deposited on the first layer and on the gate structure. Portions of the second layer disposed on the first layer and on the top surface of the gate structure are removed, so that a remaining portion of the second layer is disposed o...

A process for fabricating an MOS device having a highly-localized halo region includes the formation of a first halo region at a first surface of a silicon substrate, and a second halo region at a second surface of the silicon substrate. The second surface of the silicon substrate is formed by anisotropically etching the first surface of the silicon substrate to remove a portion of the material from the substrate. Both the first and second halo regions are formed by low-energy ion implantation. ...

The improved neuron is connected to input buses which transport input data and control signals. It basically consists of a computation block, a register block, an evaluation block and a daisy chain block. All these blocks, except the computation block substantially have a symmetric construction. Registers are used to store data: the local norm and context, the distance, the AIF value and the category. The improved neuron further needs some R/W memory capacity which may be placed either in the ne...

A chemical-mechanical polishing (CMP) system and method includes pumping polishing slurry from a CMP apparatus through a sampling tube to an endpoint detection apparatus during a polishing operation, and flushing the sampling tube while a polishing operation is not in progress. The flushing of the sampling tube is commenced in accordance with a control signal from the endpoint detection apparatus terminating the polishing operation; the flushing is terminated in accordance with a starting signal...

A vertically integrated structure includes a micro-electromechanical system (MEMS) and a chip for delivering signals to the MEMS. The MEMS has an anchor portion having a conductor therethrough, by which it is connected to a substrate. The chip is attached to the MEMS substrate in a direction normal to the substrate surface, so as to make a conductive path from the chip to the MEMS. The chip may be attached by bonding the conductor to C4 metal pads formed on the chip, or by bonding the conductor ...

The speed of CMOS circuits is improved by imposing a longitudinal tensile stress on the NFETs and a longitudinal compressive stress on the PFETS, by implanting in the sources and drains of the NFETs ions from the eighth column of the periodic table and hydrogen and implanting in the sources and drains of the PFETs ions from the fourth and sixth columns of the periodic table.

A system for burn-in testing of integrated circuits employs a cooling module with an aperture that accommodates a standard size holder for various chips, the holder being placed in the mouth of the aperture, in contact with a flexible seal. When the module is raised to make contact from below with a socket on a test board, the seal confines the cooling fluid and contacts on the upper surface of the holder are pressed against a set of corresponding contacts on the test board.