Disclosed is a method for preparing fluorinated emulsion polymers that reduces or eliminates the need for fluorinated surfactants comprising the steps of: a) providing a reaction mixture comprising water, surfactant, monomer mixture comprising at least one fluorinated monomer, at least one non-fluorinated monomer having high water solubility, and optionally at least one non-fluorinated monomer having low water solubility, macromolecular organic compound having a hydrophobic cavity; and b) polyme...

Stable microbicidal compositions containing a 3-isothiazolone compound, chlorate or perchlorate salts, copper salts and water are disclosed. Also disclosed are methods of preventing or reducing precipitate formation in 3-isothiazolone compositions.

Organometallic compounds containing an electron donating group-substituted alkenyl ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.

Organometallic compounds containing a phosphoamidinate ligand are provided. Such compounds are particularly suitable for use as vapor deposition precursors. Also provided are methods of depositing thin films, such as by ALD and CVD, using such compounds.

A method of manufacturing electronic devices containing one or more layers of materials that are sensitive to the strong chemicals used to remove cross-linked polymeric layers such as photoresists and antireflective coatings is provided. The cross-linked polymeric layers can be easily removed following etching through the use of certain removable layers disposed between the substrate and the cross-linked polymeric layers.

Methods for depositing uniform, pinhole-defect free organic polysilica coatings are provided. These methods allow for the use of these materials as spin-on cap layers in the manufacture of integrated circuits.

Compositions suitable for use as underfill materials in an integrated circuit assembly are provided. Also provided are methods of preparing integrated circuit assemblies containing certain underfill materials as well as electronic devices containing such integrated circuit assemblies.

Methods of preparing Group IVA and Group VIA organometallic compounds, particularly Group IVA organometallic compounds, are provided. Such manufacturing methods employ an amine and/or phosphine catalyst in a transalkylation step and may be performed in a batch, semi-continuous or continuous manner.

A method of purifying an organometallic compound by heating the organometallic compound in the presence of a trialkyl aluminum compound and a catalyst.

Compositions useful in the manufacture of compound semiconductors are provided. Methods of manufacturing compound semiconductors using these compositions are also provided.