Phosphorus is implanted into a crystalline semiconductor film by an ion dope method. However, a concentration of phosphorus required for gettering is 1.times.10.sup.20/cm.sup.3 or higher which hinders recrystallization by later anneal, and thus this becomes a problem. Also, when phosphorus is added at a high concentration, processing time required for doping is increased and throughput in a doping step is reduced, and thus this becomes a problem. The present invention is characterized in that im...

The present invention provides a structure of a semiconductor device that realizes low power consumption even where increased in screen size, and a method for manufacturing the same. The invention forms an insulating layer, forms a buried interconnection (of Cu, Au, Ag, Ni, Cr, Pd, Rh, Sn, Pb or an alloy thereof) in the insulating layer. Furthermore, after planarizing the surface of the insulating layer, a metal protection film (Ti, TiN, Ta, TaN or the like) is formed in an exposed part. By usin...

There is provided a method of manufacturing a semiconductor device having a TFT with sufficient characteristics and little fluctuation by accurately controlling the addition amount of impurity ions to the semiconductor layer using an ion doping device. A semiconductor device having a TFT showing sufficient and stable characteristics may be obtained by increasing the ratio of the dopant amount in the doping gas and decreasing the ambient atmosphere components (C, N, O) and hydrogen to be simultan...

A protective system having an upstream detection subsystem to detect a contaminant in an airflow and to provide a contaminant signal, an upstream detection subsystem, a filtration subsystem to filter the contaminant from the airflow, a valve adapted to allow selective routing of the airflow, and a control system adapted to control the valve to route the airflow through the protective system upon receiving the contaminant signal from the upstream detection subsystem. In one embodiment, the upstre...

A counter 102 counts the accumulated lighting time or the accumulated lighting time and the intensity of lighting of each pixel by a first image signal 101A and stores them in a volatile memory 103 or a nonvolatile memory 104. A correction circuit 105 corrects the first image signal based on the correction data stored previously in a correction data storage section 106 in accordance with the degree of the degradation of each spontaneous light emitting element by the use of the accumulated lighti...

In a camera having a lens barrel in front of a camera main frame and a top body panel on an upper portion of the camera main frame, the camera has: a front cover for covering a front of the camera main frame; a top body panel cover for covering a top body panel; a bottom cover for covering a bottom of the camera main frame, said bottom cover having a configuration that a part of the bottom cover turns in a front side of the camera main frame; a decorative sheet for said front cover for covering ...

Defects at the grain boundaries of a crystal silicon film, which has been crystallized from an amorphous silicon film, are passivated without using a hydrogen plasma treatment. An underlying film and a crystal silicon film which has been crystallized from an amorphous silicon film are formed on a glass substrate. A thermal oxide film is grown on the surface of the crystal silicon film by heating in an oxygen atmosphere into which NF.sub.3 gas has been added. As the thermal oxide film is grown, n...

In a process for crystallizing an amorphous silicon film at a low temperature using a catalyst element, a system which automatically introduces the catalyst element into the amorphous silicon film is provided. The process steps are necessary for applying a solution containing an element which accelerates the crystallization of an amorphous silicon film are each effected in units 14 to 21. The substrate is transferred using a robot arm 12.

The invention is concerned with the fabrication of a MIS semiconductor device of high reliability by using a low-temperature process. Disclosed is a method of fabricating a MIS semiconductor device, wherein doped regions are selectively formed in a semiconductor substrate or a semiconductor thin film, provisions are then made so that laser or equivalent high-intensity light is radiated also onto the boundaries between the doped regions and their adjacent active region, and the laser or equivalen...

A D/A converter performs a D/A conversion on digital light quantity indication data outputted from a CPU to generate an analog light quantity indication signal. The analog light quantity indication signal thus generated is supplied to both a power supply circuit and a light quantity control circuit comprising a photometric sensor, an integration circuit, and a comparison circuit. The light quantity control circuit outputs to a flash light emission circuit a light emission stop signal at the time...