Disclosed is apparatus for removing the top of a metallic container such as an aluminum beverage container. The device, in removing the container top, leaves the bead around the top of the container intact. The severed edge remaining on the container is substantially burr free, thereby rendering the container suitable for use as a tumbler or other household container.

Processes for manufacturing buried channel charge coupled devices (CCDs). After formation of an insulating layer at the surface of the CCD semiconductor substrate, a dopant material, suitable for the formation of the buried channel, is ion implanted into the insulating material. Subsequent diffusion steps cause the dopant to migrate into the underlying surface of the semiconductor substrate so as to define the buried channel region below the substrate surface.

A complimentary output pair (10) having a P-channel transistor (12) and an N-channel transistor (14) prevents output voltage spikes due to rapid changes in current with respect to time at the V.sub.cc power supply and ground (32) nodes by using a "graded turn-on." Both the P-channel transistor (12) and the N-channel (14) utilize a serpentine polysilicon gate (16), (24), in order to sequentially turn on the sub-transistors in response to a changing input. Pull-up (36) and pull-down (40) transisto...

A multiple oscillator switching circuit for a digital processing system that includes a central processing unit having a first internal timing cycle and connected to a plurality of peripheral devices, each peripheral device having an independent internal timing cycle. The central processing unit is further connected to an oscillator switching circuit. The oscillator switching circuit includes several oscillators. Each oscillator has an output consisting of an independent internal frequency. A se...

Using a method according to one embodiment of the present invention, an EPROM array may be fabricated providing a dense EPROM array. First the polycrystalline silicon floating gates are formed and partially patterned on the surface of a substrate. A thin thermally grown oxide layer is then formed over the entire array. The source/drain regions are then implanted through the thin silicon dioxide layer into the substrate. Next a thick silicon dioxide layer is deposited by chemical vapor deposition...

The specification discloses a charge transfer imaging device (10) having a charge removal gate (26). Pulses (30) of sufficient amplitude and frequency are applied to gate (26) in order to remove charge from device (10) by electron-hole recombination through interface traps of electrons and holes. Pulses of one amplitude reduce blooming of the device when used as an imager, while pulses of a second amplitude may be used to produce imager aperture control and gamma correction. Further, the charge ...

A digital lattice filter includes a Y-adder (44) and a B-adder (106). The Y-adder (44) calculates the Y-values for a linear predictive coding voice compression technique and the B-adder (106) calculates the B-values. Each of the calculated B-values output by the B-adder (106) is input to a B-stack (118) for storage therein. The B-stack (118) delays the B-values for one sample period. Multiplier constants are contained in a K-stack (90) for output to both adders (44) and (106) for use in the mult...

A plasma dry etch process for etching semiconductor insulating materials, such as thermally grown or CVD deposited silicon oxide, with selectivity to silicon and refractory metals and their silicides, using a fluorinated inorganic center together with a hydrogen-liberating source under glow discharge conditions. The process does not employ saturated or unsaturated fluorocarbons as etchants, thereby eliminating the polymerization problem.

In seismic exploration, seismic impulses are generated successively at locations uniformly spaced along traverse segments which regularly cross a median line. The segments are of length equal to an integral multiple of the spacing between the locations. Seismic waves resulting from each impulse are detected at a set of the locations which bears the same traverse relationship to its shot point where the impulse giving rise to the detected waves is generated as every other set bears to its shot po...

A MOS bulk device having source/drain-contact regions 36 which are almost completely isolated by a dielectric 35. These "source/drain" regions 36 formed by using a silicon etch to form a recess, limiting the etched recess with oxide, and backfilling with polysilicon. A short isotropic oxide etch, followed by a polysilicon filament deposition, then makes contact between the oxide-isolated source/drain-contact regions 36 and the channel region 33 of the active device. Outdiffusion through the smal...