
In a dynamic random access memory (DRAM), a step produced by forming a stacked capacitor can be prevented from being produced and increased, thereby facilitating the patterning of an upper layer (wiring, etc.). Further, the pattern layout can be made with freedom and the DRAM itself can be highly integrated. This dynamic random access memory is constructed such that stacked capacitors (C.sub.1), (C.sub.2) composed of accumulation node electrodes (7a), (7b), a dielectric layer (8) and a sub-plate...











