A method for fabricating an NROM is described. A stacked nitride layer is formed on a substrate and then patterned to expose a portion of the substrate. An implantation is performed to form a buried bit line in the exposed substrate, and then an oxide layer is formed on the buried bit line by using wet oxidation. Thereafter, a gate oxide layer is formed in the periphery circuit region by using dry oxidation. A patterned polycide layer is formed on the substrate covering the stacked nitride layer...

A friction plate coupling structure inside an automatic document feeder. The friction contact surface of the friction plates is designed to have a slant surface resembling a frustum so that overall contact area is increased and stability of the coupling between the friction plates is improved.

The present invention relates to a method for fabricating a nitride read only memory (NROM), comprising: forming a doped polysilicon layer over a substrate, defining the doped polysilicon layer by using a patterned mask layer to form a plurality of doped polysilicon lines and expose a portion of the substrate. Afterwards, a thermal process is performed to form an oxide layer on the exposed substrate and sidewalls of the doped polysilicon lines. During the thermal process, the dopants are driven ...

A refrigerator is provided. The refrigerator comprises an ultraviolet discharging lamp, for irradiating ultraviolet rays to an air duct inside the refrigerator, and irradiating a visible light to a cold storage compartment of the refrigerator; a light catalyst filter, installed in the air duct and activated by the ultraviolet rays; a fan for forming an air curtain when a door of the cold storage compartment of the refrigerator is opened; and a controlling device for lighting the ultraviolet disc...

A method for fabricating a mask ROM device is described. The method includes forming a buried drain region in a substrate and forming a thick oxide layer on the substrate. Perpendicular to the direction of the buried drain region, a bar-shaped silicon nitride layer is formed on the thick oxide layer. A portion of the thick oxide layer is then removed to expose the substrate, followed by forming a gate oxide layer on the exposed substrate surface for forming a plurality of coded memory cells, whe...

A remotely switchable circuit breaker mounted in the casing of an electrical device comprises a circuit breaker unit, provided with a switching paddle, and a remote switching mechanism connected to the switching paddle. The remote switching mechanism comprises a connecting rod that pivotally connects a remote switch and rotatably and slidably connects the paddle. The remote switch, including a key button, is pivotally fastened with the casing via a first fastening base. The connecting rod is fur...

A piezoelectric ink-jet printhead that uses a metallic layer and a thick film layer with a slot hole therein instead of a ceramic vibration plate and an ink layer. The piezoelectric layer and the upper electrode layer are formed inside the ink cavity so that overall thickness of the print head is reduced. To form the ink-jet print head, a metallic layer and a lower electrode layer are sequentially formed over a substrate. A patterned piezoelectric layer and an upper electrode layer are sequentia...

A tape structure and method of fabricating the tape structure. The method includes plating a metal such as silver, bismuth, gold, magnesium, nickel, or palladium over leads so that recess cavities and whiskers on the leads are greatly reduced.

A method of manufacturing semiconductor devices. A gate structure is formed over a substrate. A dopant implantation is carried out to form a lightly doped region in the substrate on each side of the gate structure. An insulation layer is formed over the substrate. A portion of the insulation is later removed so that a portion of the insulation layer is retained over the substrate on each side of the gate structure. A spacer is formed on each sidewall of the gate structure. Another ion implantati...

A method for forming a metal salicide layer on a shallow junction is described. A substrate having a gate structure thereon and a shallow junction therein is provided. An atomic layer deposition (ALD) process is then performed to deposit a tungsten salicide layer on the shallow junction. In the ALD process, a gaseous silicon-containing compound and a gaseous metal-containing compound that react into metal silicide are introduced alternatively onto the substrate, wherein either compound can be in...