An MOS device is provided having a channel-stop implant placed between active regions and beneath field oxides. The channel-stop dopant material is a p-type material of atomic weight greater than boron, and preferably utilizes solely indium ions. The indium ions, once implanted, have a greater tendency to remain in their position than boron ions. Subsequent temperature cycles caused by, for example, field oxide growth do not significantly change the initial implant position. Thus, NMOS devices u...











