
A scalable stack-gate flash memory cell and its contactless memory array are disclosed by the present invention, in which the control-gate length and the implanted region of a scalable stack-gate flash memory cell are separately defined by two sidewall dielectric spacers formed over a sidewall on the common-source region and, therefore, can be controlled to be smaller than a minimum-feature-size of technology used; a contactless memory array comprises a plurality of common-source/drain conductiv...











