
An apparatus and method for generating microscopic scan data of C-V and/or dC/dV over a scan area. A scanning microscope, for example a scanning force microscope, is provided with a voltage biased tip, for example, of tungsten, which is scanned across an area to derive the data. The data can be used to derive a plot of semiconductor dopant level across the scan area. Other material properties can be derived, for example, carrier generation and recombination rates and subsurface defects.











