A transportable bump plating fixture and method for holding a semiconductor wafer in a face up orientation in a plating bath while plating bumps on the metallized circuitry on the wafer face. The fixture includes an elastomer pad which contacts the back of the wafer and forms a seal which prevents the plating bath from coming into contact with the back of the wafer. The fixture also includes means for forming a cathodic electrical connection to the metallization on the face of the wafer, and fur...

A front end signal processing method and apparatus for processing a signal from an image sensor are provided for readily clamping a black level, improving the manufacturing yield, and reducing the power consumption. A luminance detector/digitizer receives a sensor output signal from an image sensor, detects luminance information included in the sensor output signal, and generates a digital luminance signal representative of the detected luminance information. A digital processor receives the dig...

A computing device (10) for capturing designated data from one or more graphic applications (60) comprising a screen area (16) for viewing one or more graphic functions (111) wherein each function (111) is manipulated with a plurality of shortcut keys (75) or a cursor pad (24) communicably linked to the screen area (16). A first applications (60) with a screen interface (100) for the user is provided within the device (10) having graphing capabilities for manipulating the graphs (111) on the scr...

An analog signal monitoring (ASM) circuit (40, 42) non-intrusively monitors an analog circuit (20) within an electronic system. The ASM circuit (40,42) comprises input circuitry (80) that receives a plurality of analog signal inputs while the analog circuit (20) operates in a functional mode. Translation circuitry (142) associates with the input circuitry (80) for converting the analog signal inputs into digital signal representations of the analog signal inputs. Output circuitry (58) associates...

An improved method is provided for integrating HSQ into integrated circuit structures and processes, especially those requiring multiple levels of interconnect lines. In a preferred embodiment, interconnect lines 14 are first patterned and etched on a substrate 10. A low-k material such as hydrogen silsesquioxane (HSQ) 18 is spun across the surface of the wafer to fill areas between interconnect lines. A capping layer such as SiO.sub.2 20 is applied to on top of the low-k material. The HSQ is th...

The objective is to provide a type of dynamic memory which does not adversely affect the data, even when noise is superimposed on the RAS signal.

A system for controlling slew rate in a motor control circuit for a motor comprises a high side switching device coupled to a coil of the motor, the high side switching device operable to control a voltage excitation signal applied at the coil. The system also comprises a high side slew rate control circuit operable to control a slew rate of the voltage excitation signal. The high side slew rate control circuit includes: an amplifier having an output coupled to an input of the high side switchin...

Prevents deterioration of the element characteristics of the gate voltage tolerance and the like which is caused by the metallic contaminants that are sealed in the element forming region at the time of applying a trench separator in a SOI substrate. Polysilicon 12 is formed on the side walls of the trench 5, and the metallic contaminants within the element forming region are collected in this polysilicon 12.

A high voltage output stage amplifier that maximizes the output voltage swing when the peak-to-peak output voltage signal is higher than the supply voltage used in the signal conditioning circuits of the amplifier. The amplifier allows the maximum peak-to-peak swing on the output stage by shifting the quiescent voltage of the output stage to the midpoint of the output supply voltage. The shift is accomplished by tapping an offset current at the input of the error integrating stage of the amplifi...

The present invention provides a method for manufacturing a semiconductor device. In one embodiment, the method for manufacturing the semiconductor device includes a method for manufacturing a zener diode, including among others, forming a doped well within a substrate and forming a suppression implant within the substrate. The method for manufacturing the zener diode may further include forming a cathode and an anode within the substrate, wherein the suppression implant is located proximate the...