A particle probe is positioned to a specific region when an actual position of the specific region appears shifted relative to its rated position due to local fields, and can therefore not be defined with high precision. The particle probe is positioned to a prescribed region. The particle probe is then deflected in the environment of this region such that the particle probe impinges different regions at the prescribed region. The position of the specific region is determined from the measured s...

A source of clusters of atoms is provided, wherein the clusters are thermally conditioned after their formation so that the clusters are in the liquid state. A beam of clusters is first formed during the mixing of a stream of atoms and a carrier gas. The beam of clusters mixed with carrier gas is passed through a conditioner, preferably including a heated drift tube, to bring the clusters to a temperature whereat the clusters are in a condensed state without crystalline order, comparable to the ...

This invention provides for an integrated electron optical/differential pumping/imaging signal detection system for an environmental scanning electron microscope (ESEM). The ESEM includes a substantially cylindrical objective lens magnetic housing containing an axially disposed vacuum liner tube and containing means for magnetically focusing a beam of electrons passing through said liner tube. An annular ring comprised of magnetic materials abuts said magnetic housing at the lower end thereof an...

A mask (38), which is particularly useful in parallel-printing ion beam lithography because of its dimensional stability, is disclosed. The mask (38) represents a relatively rigid screen (22) constructed from a relatively rigid material, such as monocrystalline silicon, with meshes (28) formed through the screen (22) over the entire area of the screen (22). The preferred embodiment applies a less rigid filler material (34) into the meshes (28) over the entire area of the screen (22), then remove...

Apparatus for producing a pulsed electron beam, particularly adapted for inspecting integrated circuits, includes a beam scanner (10) for causing a continuous electron beam to scan a circle, which beam may emerge from the second of three electrostatic lenses of an electron beam microscope. The beam then passes a deflecting means (12) on the circle for deflecting the beam in a radial direction at selected locations, before being collected by means (14) for collecting the electron pulses from alte...

There is disclosed an electron microscope comprising a stage assembly for tilting, translating, or rotating the specimen, a first and a second detector disposed on opposite sides of the optical axis of the beam to detect secondary electrons produced in response to the incidence of the beam. The first detector is disposed relatively close to the optical axis. The second detector is located relatively remotely from the optical axis to prevent the state assembly from colliding against the detector ...

The tunneling scanning microscope which is provided with a light source to irradiate a sample with light, particularly with light having one wavelength. The apparatus is used for the investigation of the surface structure of materials which have very low conductivity but increase their conductivities under light irradiation. In particular, the apparatus selectively provides an atomic image of an element of a compound in response to a selected wavelength.

Protective sheath for optical or electrical conductors hardened with respect to X-rays. It comprises a flexible sheath formed from a resin matrix containing in regularly dispersed powder form at least one metal and/or at least one inorganic compound of a metal, said metal having a high atomic number of at least 47, a covering placed between the optical fibre and the X-ray protection sheath and optionally a mechanical protection sheath made from plastic directly covering the optical fibre.

An ion-projecting apparatus which has between the ion source and the mask, directly proximal to the mask, at least one ion optical correction element in the form of a multipole with at least eight poles and so located that there is no other deflection means between the octapole and the mask.

This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of .sup.31P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out ...