Techniques for melting and forming aerosols from solid CIPC are disclosed. Solid CIPC in block form is convenient to ship and to handle. Solid CIPC in block form appears to have a consistency of solid paraffin wax. Solid CIPC is melted by controlled techniques to form a substantially pure liquid stream of CIPC. The molten or liquid stream of CIPC is converted to an aerosol of CIPC either by a pressurized, hot air stream or by a combustion gas stream.

A method of filling contact holes in a dielectric layer on an integrated circuit wafer. The method reduces processing steps and results in a reliable metal plug filling the contact hole. In one embodiment the contact hole is filled using blanket deposition of titanium silicide using chemical vapor deposition followed by etchback. In a second embodiment the contact hole is filled with titanium silicide using selective chemical vapor deposition of titanium silicide. In a third embodiment an adhesi...

The remote-plasma-CVD process for coating or treating large-surface substrates includes exciting an excitation gas located remotely from a substrate surface to be coated or treated in modular plasma source devices arranged either in a linear arrangement or in a planar, grid-like arrangement over the substrate surface and feeding a reactant gas with the excitation gas from the plasma source devices to the substrate surface to excite the reactant gas with the excitation gas and thus form a coating...

Semiconductor devices are prepared by growth of epitaxial layers on a substrate from metalorganic compounds of the formula MR.sub.3, R being an alkyl group, or its amine adduct. The metalorganic compound was prepared by reacting a Grignard reagent with a metal halide in an amine solvent.

Electrochemical vapor deposition (EVD) of oxygen ion conducting and mixed conducting, oxygen-ionic/electronic, oxide layers is achieved at near atmospheric pressure process conditions by employing metals and metal compounds for removal and/or recovery of the free halogen byproduct of the EVD reaction. The metals and metal compounds are employed as solids, vapors, and as oxides in intimate mixture with carbon directly within the deposition zone together with the substrates to be coated. The proce...

A method for chemical vapor deposition of a silicon-nitrogen based film onto a substrate includes introducing into a deposition chamber: (i) a substrate; (ii) a haloethylsilane precursor in the vapor state; and (iii) at least one nitrogen-containing reactant gas; and maintaining the deposition temperature within the chamber as from about 200.degree. C. to about 1000.degree. C. for a period of time sufficient to deposit a silicon-nitrogen based film on the substrate. Silicon-nitrogen based films ...

The present invention is an apparatus and method for the fabrication of high quality silicon films by deposition of a silicon vapor onto a substrate. The silicon film fabrication apparatus includes a chamber, a crucible having an anode for melting a silicon metal, an anode for generating a DC arc discharge plasma, a substrate holder facing the crucible, and a heater for heating a substrate arranged in the substrate holder. The apparatus also includes a variable DC power supply, a cathode element...

Annealing a planar wave guide layer is critical because small structural imperfections lead to optical problems. Chemical vapor deposition of the layer tends to leave gaseous substances bonded to the deposit, which on being driven off by initial annealing warm-ups leave cavities requiring densification. Traditional annealing methods take several hours. This invention proposes a rapid heating of the layer to a temperature below the flow temperature, maintaining this temperature for about 30 to 30...

A phase-shifting photomask blank is made by sputtering a target of molybdenum silicide with a sputtering gas to which nitric monoxide is added in a ratio of 2.65-6.47% by volume. A nitrided-oxide film of molybdenum silicide as a phase-shifting film is formed on a transparent substrate. A base phase-shifting film may be formed on a transparent substrate and then a nitrided-oxide film of molybdenum silicide as a surface layer may be formed on top of the base phase-shifting film by sputtering a tar...

A CVD precursor that is a precursor in film preparation by the CVD method, comprising a metalorganic compound containing a metal element constituting the film (called "main compound") having blended therewith another organic compound, the other organic compound having a lower vapor pressure than the main compound at a precursor vaporization temperature and when blended with the main compound forming a fusible blend having a lower melting point than the melting point of the main compound. In part...