Disclosed herein is a heat resistant pad which comprises a plurality layers of batt mixtures essentially consisting of carbon fibers and aromatic polyamide fibers, the layers of batt mixtures being superposed and entangled to integrate into a felt-like structure by way of needle punching. A heat resistant pad of such constitution has a property of adequate flexibility, wear resistance, impact resistance, frictional coefficient and cushioning property for use with rear facilities of an aluminum e...

In a system for controlling a puller assembly (3) for withdrawing an extruded section as it exits from an extruder, in which the puller assembly (3) is moved in withdrawing direction by means of a drive mechanism (9), the actual speed with which the extruded section (1) is withdrawn is sensed by means of a tachometer (34) and is delivered to a speed controller (32) for controlling the speed of the drive mechanism (9) for the puller assembly. Optimum pulling force may be adjusted by providing fol...

An organic electronic device includes a first member including: a substrate; a first conductive layer formed on the substrate; an organic active layer deposited on a portion of the first conductive layer; and a second conductive layer deposited on the organic active layer and on the first conductive layer; and a second member coupled to the first member to form an enclosed space, the second member including: a lid; and a third conductive layer deposited on the lid, wherein the third conductive l...

A semiconductor device having two thin film transistors where cross-talk is minimized and a flat panel display device having the same. The semiconductor device includes a first electrode, a second electrode surrounding the first electrode in the same plane, a third electrode surrounding the second electrode in the same plane, a fourth electrode surrounding the third electrode in the same plane, a first gate electrode insulated from the first through fourth electrodes and arranged on another plan...

An organic electroluminescent display (ELD) device having a first substrate having an array element layer and a second substrate having an organic electroluminescent diode includes a gate line formed on the first substrate, a data line formed on the first substrate, a power supply line spaced apart from the data line and formed on the first substrate, the power supply line being formed with same material as the gate line in a same process as the gate line, a switching thin film transistor having...

In a semiconductor device, typically an active matrix display device, the structure of TFTs arranged in the respective circuits are made suitable in accordance with the function of the circuit, and along with improving the operating characteristics and the reliability of the semiconductor device, the manufacturing cost is reduced and the yield is increased by reducing the number of process steps. A semiconductor device has a semiconductor layer, an insulating film formed contacting the semicondu...

To provide an electro-optical device and an electronic apparatus that have less parasitic capacitance between wiring lines resulted from the crossing wiring lines and operates at a high speed. The electro-optical device includes a first main signal wiring line which is arranged to correspond to a unit circuit and which transmits a predetermined signal; a first sub signal wiring line whose width is narrower than that of the first main signal wiring line; a second main signal wiring line arranged ...

Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, the crystallinity is improved and the gettering of nickel elements proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides wit...

A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region.

A semiconductor device which has satisfactory characteristics is provided. The semiconductor device includes a TFT manufactured by using a satisfactory crystalline semiconductor film and a circuit manufactured by using the TFT. An n-type impurity element (typically, phosphorous) is added to a gettering region of an n-channel TFT. A p-type impurity element (typically, boron) and a rare gas element (typically, argon) are added to a gettering region of a p-channel TFT. Then, there is performed heat...