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Results for FIELD_OF_SEARCH: 356/237.5
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A plurality of cassettes, each having a plurality of wafers respectively having a first defect information, is selected. Each of the cassettes is then assigned to a corresponding tool having at least one reaction chamber, and the wafers are substantially equally assigned to the reaction chambers. A first process is then performed on each of the wafers in the reaction chamber. Finally, a first defect inspection process is performed on each of the wafers.
A surface inspection apparatus comprises a light source, a scan optical system having a scanning means for scanning a wafer surface in a direction of crossing the wafer by luminous flux from the light source, a moving unit for moving the wafer relatively in a direction of a prescribed angle with respect to the scanning direction, a light receiving unit having a photoelectric converter for receiving scattered lights from the wafer surface, and a signal processing unit performing the the surface i...
A pattern inspection apparatus comprises an illumination optics applying a first inspection light on a predetermined wavelength to a surface opposite to a pattern formed surface of the substrate, and a second inspection light whose wavelength is equal to the wavelength of the first inspection light to the pattern formed surface, a detector independently detecting a transmitted light from the substrate by irradiation of the first inspection light and a reflected light from the substrate by irradi...
Calibration of pattern recognition in bright field imaging systems is disclosed. A target pattern on a substrate on the stage is brought into focus of a bright field system. The image is scanned in a first direction while measuring an edge scattering pattern from a feature of the target pattern. The edge scattering pattern is characterized by first and second peaks. A position of the bright field system's illuminator or beam shaping and relay optics is adjusted perpendicular to an optical path u...
The present invention is a method for inspecting height, scanning the surface of a subject item having zones of different reflectance with incident light of a prescribed intensity, causing the reflected light from the surface to be imaged with means for detecting light spot positions, and detecting the height of said surface from the light spot position which was imaged, said method comprising: a step of scanning, in a second zone with low reflectance surrounding a first zone with high reflectan...
An apparatus for monitoring a photolithography process includes a measurer and a data processor. The measurer measures an optical characteristic of a substrate. The data processor determines defectiveness of the substrate based on the optical the measurer.
The invention provides methods and apparatus for defining a pattern on a substrate. An example apparatus includes: an emission source for directing an emission to the substrate, defining a working position between the emission source and the substrate, at least one shadow mask having one or more apertures and at least one inspection device for inspecting the properties of the substrate and/or the pattern, the inspection device having at least one inspection tool. The shadow mask and the inspecti...
During mask or reticle inspection, each region is scanned at least twice, using an overlap between each pair of consecutive frames. System contamination and camera blemishes have approximately constant frame coordinates, while mask defects have constant reticle coordinates, but inconstant scan frame coordinates. True defects are detected at different coordinates in consecutive frames with a known displacement therebetween.
A system uses reflectance spectrophotometry to characterize a sample having any number of structures. The system uses toroidal mirrors that are shaped in such a way that the angle of reflectance off of the target is small. The small angle of reflectance may allow for simplification of calculations and can result in a faster processing time. In addition, a more accurate measurement can be achieved when the reflected beam is close to normal.
Methods and systems for inspecting a specimen are provided. One method includes directing ultraviolet light to a specimen. The method also includes detecting light scattered from the specimen having a selected wavelength range. In addition, the method includes detecting features, defects, or light scattering properties of the specimen using signals representative of the detected light. One inspection system includes an illumination subsystem configured to direct ultraviolet light to a specimen. ...
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