Solid photographic addenda, such as photographic color couplers or sensitizing dyes, which are wet with occluded organic liquid, after being subjected, for example, to processes such as crystallization or washing, are contacted with an extractant composed of carbon dioxide in liquid form or in the form of a supercritical fluid to remove the organic liquid. The process is capable of use with any solid photographic addendum which is insoluble in the extractant and any organic liquid which is solub...

An optical data storage system that utilizes the frequency dimension to increase the storage capacity. The storage system has a storage material which contains a guest material such as cinnoline, which is dissolved in a host material such as naphthalene. This storage material system exhibits an inhomogeneous absorption line broadening and undergoes a photochemical reaction upon exposure to light.

In accordance with the present invention, nanometer-scale reversible electronic switches are provided that can be assembled to make cross-bar circuits that provide memory, logic, and communications functions. The electronic switches, or crossed-wire devices, comprise a pair of crossed wires that form a junction where one wire crosses another at an angle other than zero degrees and at least one connector species connecting the pair of crossed wires in the junction. The junction has a functional d...

A non-volatile, resistively switching memory cell includes a first electrode, a second electrode and a solid electrolyte, which is arranged such that it makes contact between the electrodes, and is composed of an amorphous or partially amorphous, non-oxidic matrix and a metal which is distributed in the amorphous or partially amorphous, non-oxidic matrix and whose cations migrate to the cathode in the amorphous or partially amorphous, non-oxidic matrix under the influence of an electrical voltag...

A keyboard unit is disclosed for temporarily storing information for subsequent transfer to a computer. The unit includes a plurality of pushbuttons interconnected with a two-digit display through encoding and decoding circuitry, for operator verification of data entered and further includes a shift register memory for temporarily storing the data entered. The shift register memory is programmed by a counter so that the data is sequentially stored in the individual shift registers. The shift reg...

This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed elect...

An architecture, and its method of formation and operation, containing a high density memory array of semi-volatile or non-volatile memory elements, including, but not limited to, programmable conductive access memory elements. The architecture in one exemplary embodiment has a pair of semi-volatile or non-volatile memory elements which selectively share a bit line through respective first electrodes and access transistors controlled by respective word lines. The memory elements each have a resp...

A memory security device within a chip which employs a power source coupled to the memory. The power source produces a signal having a level sufficient to erase or destroy the memory when the chip is exposed to acid. The power source includes an electrolytic cell for producing a direct voltage output, and an electrolytic signal amplification circuit coupled between the electrolytic cell and the memory.

A process useful for the reversible storage of information units involves the targeted, positionally selective and time-stable labeling of individual atomic positions or groups of such positions on the surface of a solid by chemical reaction with foreign atoms or molecules or by chemisorption, with the lateral atomic order of the surface in each case being retained, even on a local level.

This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 10.sup.15 bits/cm.sup.3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed elect...