A method for depositing a first material on a substrate includes providing the substrate in a deposition chamber. A molten body is formed between the substrate and a source of the first material by melting one or more second materials. A flow of the first material is passed through the molten body and from the molten body to the substrate as a vapor flow. An essentially non-expending portion of the molten body comprises an alloy having a melting temperature below a melting temperature of the fir...

A mass spectrometer is provided herein and is configured to have two ionization sources, in which a first ionization source, such as MALDI, ESI and the like, which is capable of providing in addition to ions a set of normally intractable desorbed neutrals that are ionized by a second EI source coupled with the first source.

In a method for inhibiting space charge-related effects in an ion source, an electron beam is directed into a chamber to produce ions from sample material in the chamber. A voltage pulse is applied to the chamber to perturb an electron space charge present in the chamber. The ion source may be an electron impact ionization (EI) apparatus. The ion source may operated in conjunction with a mass spectrometry system.

An electron impact ion source includes an ionization chamber in which a first rf multipole field can be generated and an ion guide positioned downstream from the ionization chamber in which a second rf multipole field can be generated wherein electrons are injected into the ionization chamber along the axis (on-axis) to ionize an analyte sample provided to the ionization chamber.

An ion source comprising a right-circular cylindrical cathode having two anode rods extending through the cylinder and symmetrically disposed about its axis. An ion beam outlet aperture is formed in the cylindrical wall of the cathode, and an inlet is provided in the cathode for introducing a gas therein.

A method of operating a gas phase growth system is disclosed. The method includes a processing stage and a stabilizer feeding stage. In a non-limiting embodiment of the disclosure, an organometallic complex is vaporized by a vaporizer, and subsequently fed to a reaction chamber through a gas line communicating the vaporizer with the reaction chamber, whereby a film is formed on a substrate in the reaction chamber. During the stabilizer feeding stage, a stabilizer for the organometallic complex i...

The invention relates to the deposition of thin silver films on various substrates, particularly superconductor substrates. The method consists of CVD deposition of silver on a substrate with the aid of a silver precursor solution. The silver precursor is an RCO.sub.2Ag silver carboxylate, wherein R is a linear or branched radical having 3-7 carbon atoms, used in the form of an organic liquid solution. The precursor concentration of the solution ranges from 0.01 to 0.6 mol/l. The organic liquid ...

This is an ion-producing source having a distinct chemical ionization configuration and a distinct electron impact configuration. In this source, a hollow chamber including an ion source and a source of sample molecules receives a hollow, slidable cylindrical member having a chemical ionization chamber within it. Orifices in the chamber and the cylindrical member connect the chemical ionization source chamber to the electron source and to the sample molecule source when the cylindrical member is...

Method of forming an outwardly grown aluminide diffusion coating on a superalloy substrate disposed in a coating retort including the steps of heating the substrate to a temperature of 900 to 1200 degrees C., flowing a coating gas comprising aluminum trichloride and a carrier gas through the coating retort at a flow rate of the coating gas of about 100 to about 450 standard cubic feet per hour, providing a concentration of aluminum trichloride in the retort of less than 1.4% by volume of the coa...

A method for increasing deposition rates of metal layers from metal-carbonyl precursors by mixing a vapor of the metal-carbonyl precursor with CO gas. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a metal-carbonyl precursor vapor and a CO gas, and exposing the substrate to the process gas to deposit a metal layer on the substrate by a thermal chemical vapor deposition process.