This invention includes atomic layer deposition methods of forming conductive metal nitride comprising layers. In one implementation, an atomic layer deposition method of forming a conductive metal nitride comprising layer includes positioning a substrate within a deposition chamber. A first species is chemisorbed to form a first species monolayer onto the substrate from a gaseous first precursor comprising at least one of an amido metal organic compound or an imido metal organic compound. The f...

The alkoxide compound of the present invention is represented by general formula (I) below. The alkoxide compound of the present invention is an iron compound that can be delivered in a liquid state and is easily vaporized due to its high vapor pressure. The compound particularly enables production of thin films with excellent composition controllability, and hence is suitable for producing multi-component thin films by CVD. ##STR00001## (In the formula, R.sup.1 and R.sup.2 each independently re...

A chemical vapor deposition process for laying down a gallium oxide coating on a glass substrate through the use of an organic ester and an inorganic gallium halide. The organic ester preferably contains 3-6 carbon atoms which contributes to obtaining a high deposition rate. The chemical vapor deposition method to form the gallium oxide coating is preferably at, essentially, atmospheric pressure. The resulting article has a gallium oxide coating which can be of substantial thickness because of t...

A multi-step method for depositing ruthenium thin films having high conductivity and superior adherence to the substrate is described. The method includes the deposition of a ruthenium nucleation layer followed by the deposition of a highly conductive ruthenium upper layer. Both layers are deposited using chemical vapor deposition (CVD) employing low deposition rates.

A component delivery mechanism for distributing a component inside a process chamber is disclosed. The component is used to process a work piece within the process chamber. The component delivery mechanism includes a plurality of component outputs for outputting the component to a desired region of the process chamber. The component delivery mechanism further includes a spatial distribution switch coupled to the plurality of component outputs. The spatial distribution switch is arranged for dire...

A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surf...

In one embodiment of the invention, iCVD is used to form linear thin films using a radical initiator and an alkene. In another embodiment, iCVD is used to form crosslinked thin films by the addition of a crosslinking agent (e.g., a diacrylate or a dimethyacrylate). The incorporation of a crosslinking agent into the thin films is shown to increase systematically with its partial pressure. In one embodiment, when the crosslinker is EDGA and the monomer is HEMA it results in crosslinked P(HEMA-co-E...

A method for forming a chemically patterned surface includes subjecting a surface of a substrate to a fluid including a component such that the component reacts with the surface to form a first distribution of the component on the surface. Thereafter, the surface is deformed along at least one axis such that the first distribution of the component is converted to a second distribution different from the first distribution. The second distribution is a gradient of the component.

Chemical vapor deposition processes result in films having low dielectric constants when suitable chemical precursors are utilized. Preferred chemical precursors include siloxanes, (fluoroalkyl)fluorosiloxanes, (fluoroalkyl)silanes, (alkyl)fluorosilanes, (fluoroalkyl)fluorosilanes, alkylsiloxysilanes, alkoxysilanes, alkylalkoxysilanes, silylmethanes, alkoxysilylmethanes, alkylalkoxysilylmethanes, alkoxymethanes, alkylalkoxymethanes, and mixtures thereof. The precursors are particularly suited to...

A process for producing a thermal barrier coating, in which organometal complexes of zirconium and at least one stabilizing element selected from the group of the alkaline earth metals or rare earths are provided as starting substances, the starting substances are evaporated by heating and the coating gases that are generated in this manner are transported to a component to be coated, which is heated at a deposition temperature, where they are broken down so that a layer is deposited, in which p...