Provided is a method for fabricating a metal oxide thin film in which a metal oxide generated by a chemical reaction between a first reactant and a second reactant is deposited on the surface of a substrate as a thin film. The method involves introducing a first reactant containing a metal-organic compound into a reaction chamber including a substrate; and introducing a second reactant containing alcohol. Direct oxidation of a substrate or a deposition surface is suppressed by a reactant gas dur...

Methods of forming depositing a ferroelectric thin film, such as PGO, by preparing a substrate with an upper surface of silicon, silicon oxide, or a high-k material, such as hafnium oxide, zirconium oxide, aluminum oxide, and lanthanum oxide, depositing an indium oxide film over the substrate, and then depositing the ferroelectric film using MOCVD.

A method or process for producing PZT films by using a Ti material having a broad allowable temperature range for providing a predetermined film composition, easily thermally deposited from Ti(OiPr).sub.2 (dibm).sub.2 at a low substrate temperature of 450.degree. C. or less in CVD. Starting materials are fed in a solution vaporization system. The starting materials, Ti (OiPr).sub.2 (dibm).sub.2, used as a T1 source, and a combination of Pb(dpm).sub.2 -Zr(Oipr)(dpm).sub.3 -Ti(OiPr).sub.2 (dibm).s...

Improved methods of forming PZT thin films that are compatible with industry-standard chemical vapor deposition production techniques are described. These methods enable PZT thin films having thicknesses of 70 nm or less to be fabricated with high within-wafer uniformity, high throughput and at a relatively low deposition temperature. In one aspect, a source reagent solution comprising a mixture of a lead precursor, a titanium precursor and a zirconium precursor in a solvent medium is provided. ...

A method of depositing a Group IV metal-containing film on a substrate by conveying one or more of certain Group IV organometallic compounds in a gaseous phase to a deposition reactor containing a substrate and decomposing the one or more Group IV organometallic compounds to form a film of a Group IV metal on the substrate is provided. Such Group IV metal-containing films are particularly useful in the manufacture of electronic devices.

A method of monitoring the synthesis of a PGO spin-coating precursor solution includes monitoring heating of the solution with a UV spectrometer and terminating the heating step when a solution property reaches a predetermined value. The method utilizes the starting materials of lead acetate trihydrate (Pb(OAc).sub.2.3H.sub.2 O) and germanium alkoxide (Ge(OR).sub.4 (R=C.sub.2 H.sub.5 and CH(CH.sub.3).sub.2)). The organic solvent is di(ethylene glycol)ethyl ether. The mixed solution of lead and d...

A series of processes have been discovered whereby uniform oxygen doping of lead chalcogenides have been achieved by using vapor deposition combined with in situ or ex situ ion implantation allowing the high yield manufacture of high S/N infrared detectors.

A process for producing a nano-structure is provided which enables control of the pore diameters and the pore intervals by film formation conditions. The process produces a nano-structure of an aluminum-silicon-germanium mixed film containing silicon and germanium at a content of 20 to 70 atom % relative to aluminum, the mixed film being constituted of a matrix composed mainly of silicon and germanium in a composition ratio of Si.sub.xGe.sub.1-x (0.ltoreq.X.ltoreq.1), and cylindrical portions ma...

Electrochemical vapor deposition (EVD) of oxygen ion conducting and mixed conducting, oxygen-ionic/electronic, oxide layers is achieved at near atmospheric pressure process conditions by employing metals and metal compounds for removal and/or recovery of the free halogen byproduct of the EVD reaction. The metals and metal compounds are employed as solids, vapors, and as oxides in intimate mixture with carbon directly within the deposition zone together with the substrates to be coated. The proce...

A method for strengthening and aging-prevention of a TZP ceramics includes the steps of: introducing TZP ceramic and Si-based ceramic powders into a furnace in which a water vapor pressure is controlled; and exposing the TZP ceramic next to Si-based ceramic in a flowing H.sub.2 atmosphere containing H.sub.2 O of no more than 0.1%, to form a silica/zircon layer on the surface of the TZP ceramic.