An apparatus and method are provided for teaching golfers how to adjust their body position relative to a golf ball depending upon their frame of reference to an intended target, in order to drive the golf ball toward the intended target.

A semiconductor device includes a compound semiconductor body having a recess, the recess having a bottom and a hollow, and a refractory metal gate electrode having a lower portion within the hollow. The compound semiconductor body includes a compound semiconductor substrate; a channel layer including a compound semiconductor of a first conductivity type, the channel layer being located on the substrate between the gate electrode and the substrate; first active layers of the compound semiconduct...

Provided are a Schottky barrier tunnel single electron transistor and a method of manufacturing the same that use a Schottky barrier formed between metal and semiconductor by replacing a source and a drain with silicide as a reactant of silicon and metal, instead of a conventional method of manufacturing a single electron transistor (SET) that includes source and drain regions by implanting dopants such that an artificial quantum dot is formed in a channel region. As a result, it does not requir...

A semiconductor device includes a semiconductor substrate, a T-shaped gate electrode, a moisture-proof insulating film, and an interlayer dielectric film. The T-shaped gate electrode has a leg portion joined to the semiconductor substrate and an overhanging head portion spaced from the semiconductor substrate. The T-shaped gate electrode includes a gate metal containing a material reactive with water. The moisture-proof insulating film is located only in the vicinity of the leg portion and cover...

A device to trace and record the path of a golfer's swing comprising a golf club, a refillable reservoir tube for water or other flowable material, and a mat with blotter-like surfaces; the reservoir tube having a small diameter orifice at its lower end and having a means for refilling at its upper end; the reservoir tube being situated in a hole through the club head. A golfer's swing of the golf club will cause a thin jet of water to issue through the small diameter orifice by centrifugal and ...

The invention, which can be utilized by a player to practice his or her competence in any sport in which a ball is hit, thrown, kicked, or otherwise propelled, comprises a ball-returning device in conjunction with an imaging device disposed in relation to the ball-returning device such that a practicing player can observe his or her form while propelling balls against the backboard. In a first embodiment the invention comprises a substantially vertical backboard having as at least one portion th...

This invention has an objective to provide a field effect transistor semiconductor which has great adhesiveness between a gate metal and an insulating film defining a gate electrode end and to improve production yield thereof. The field effect transistor semiconductor of this invention comprises a source/drain electrode 6 positioned in a predetermined position in a GaAs substrate 1, a channel region provided in the GaAs substrate 1 and between the source/drain electrodes 6, a gate electrode 11 w...

A golf apparatus includes an elastically deformable, elongated guide member having a guide member edge which is bendable by a user into an arc having a certain desired curvature substantially matching the arc of a desired swing of a golf clubhead. The guide member substantially retains the shape into which it is bent until reshaped by the user. A golfer is able to practice swinging a golf club at full speed along a desired swing path by swinging the head of the club along the arc of the guide me...

A preferred embodiment of the present invention provides a Schottky diode formed from a conductive anode contact, a semiconductor junction layer supporting the conductive contact and a base layer ring formed around at least a portion of the conductive anode contact. In particular, the base layer ring has material removed to form layer material gap (e.g., a vacuum gap) adjacent to the conductive anode contact. A dielectric layer is also provided to form one boundary of the base layer material gap...

A MOSFET device is constructed with an integrated Schottky diode clamp connected between the source or drain terminal and the bulk terminal. In an illustrative implementation, one or more MOSFETs are formed in an n-well located in a p-type silicon substrate. Each drain is formed by a p+ region underlying a portion of a metal-silicide layer. In one embodiment, the p+ region underlies an edge of the metal-silicide; in another embodiment, the p+ region underlies opposing edges of the metal-silicide...