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A memory module testing apparatus and method include a test slot adapted to receive a target memory module, wherein the target memory module includes a first memory unit to store information related to the target memory module. The memory module testing apparatus further includes a second memory unit adapted to store information related to a memory module, and a first switching unit adapted to selectively provide a driving signal to at least one of the first memory unit and the second memory uni...
The present invention relates to a write controller for a memory with a plurality of non-volatile storage cells, a read controller for a memory with a plurality of nonvolatile storage cells, to a combined write/read controller, to a solid state device comprising a memory with a plurality of non-volatile storage cells, a programmer device for writing a binary code to a non-volatile memory, to a method for writing data comprising at least one input bit to a memory having non-volatile storage cells...
A test circuit for memory having plural memory cells and address latches responsive to addressing circuitry for reading/writing to said memory cells in a normal mode, has first connecting circuitry for connecting the address latches to form a linear feedback shift register. The linear feedback shift register is responsive to a clock signal to provide a sequence of addresses for testing the memory in a test mode.
The present invention provides a circuit and a method for the full speed testing of semiconductor memory chips. The invention provides a full-speed data transition scheme for double data rate (DDR) synchronous dynamic random access memory (SDRAM). For high speed or double speed stress testing of DDR SDRAM, the internal clock is double the speed of the external clock. During high speed test, this causes the data to be written or presented to the data path two times. This invention provides a circ...
An integrated circuit and method for testing memory on that integrated circuit includes processing logic operable to perform data processing operations on data, and a number of memory units operable to store data for access by the processing logic. A memory test controller is also provided for executing test events in order to seek to detect any memory defects in the number of memory units. The controller includes a storage operable to store event defining information for each of a plurality of ...
A method of detecting errors in a priority encoder and a content addressable memory (CAM) adopting the same are provided. The CAM includes a CAM cell array, a priority encoder, and a shift register unit. The priority encoder tests the CAM cell array to determine if the CAM cell array has errors by comparing search data with data stored in the CAM cell array. The shift register unit, in response to a clock signal, transmits first through m.sup.th test data to the priority encoder to test the prio...
The pBIST solution to memory testing is a balanced hardware-software oriented solution. pBIST hardware provides access to all memories and other such logic (e.g. register files) in pipelined logic allowing back-to-back accesses. The approach then gives the user access to this logic through CPU-like logic in which the programmer can code any algorithm to target any memory testing technique required. Because hardware inside the chip is used at-speed, the full device speed capabilities are availabl...
A test circuit is sued to detect voltage, current or signals of a digital multilevel memory cell system or to test operation or performance by applying inputted voltages, currents or signals to the memory cell system.
A buffered memory module includes a buffer circuit mounted and a plurality of memory devices mounted on the first surface of the board, the memory devices being electrically connected to the buffer circuit. The memory module also includes a plurality of test pads located on a second surface of the board and electrically connected to the buffer circuit.
Memory testing at system startup, such as boot POST, of an information handling system is accelerated by adjusting memory testing routines to use instructions that take advantage of optimizations made to information handling system and CPU architectures. For instance, memory test iterations in one Mbyte portions using 128-bit SIMD registers, 64-bit MMX registers, ADD and SUB instructions, the MOVNTDQ instruction, and relying on an initial setting of the gate A20 and protected mode result in a su...
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