A phase lock loop PLL which includes an oscillator having an oscillator signal whose frequency is related to a received error correction signal and phase frequency detector receiving and comparing the oscillator signal and a reference signal from a master circuit and generating the error correction signal based on the phase difference of the oscillator signal and the reference signal. A filter, including a capacitor, connects the error correction signal from the phase-frequency detector to the o...

A phase-lock loop which includes an oscillator having an oscillator signal whose frequency is related to a received error correction signal and phase-frequency detector receiving and comparing the oscillator signal and a reference signal from the master circuit and generating the error correction signal based on the phase difference of the oscillator signal and the reference signal. A first window circuit counts the number of comparing cycles of the detector and provides a first window signal fo...

Disclosed are extracts from the leaves of Toona sinensis Roem. prepared by extracting the leaves of Toona sinensis Roem. using water and an alcohol in sequence. Also disclosed are processes for preparing extracts from the leaves of Toona sinensis Roem., and uses of such extracts in the manufacture of medicaments for use in the treatment of ovarian cancer and/or bladder cancer.

A polishing pad assembly is described for use in a chemical-mechanical polishing apparatus having a polishing platen. The polishing pad assembly includes a first pad disposed on the platen. The first pad comprises a sealable enclosure with a flexible outer skin and partially filled with a porous material. A control is adapted to inject fluid into and to remove fluid from the enclosure. The first pad has a hardness which is variable according to an amount of fluid in the enclosure. A second pad i...

Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pa...

Grooves are formed in a CMP pad by positioning the pad on a supporting surface with a working surface of the pad in spaced relation opposite to a router bit and at least one projecting stop member adjacent to the router bit, an outer end portion of the bit projecting beyond the stop. When the bit is rotated, relative axial movement between the bit and the pad causes the outer end portion of the bit to cut an initial recess in the pad. Relative lateral movement between the rotating bit and the pa...

The present invention provides an enhanced interconnect structure with improved reliability. The inventive interconnect structure has enhanced mechanical strength of via contacts provided by embedded metal liners. The embedded metal liners may be continuous or discontinuous. Discontinuous embedded metal liners are provided by a discontinuous interface at the bottom of the via located within the interlayer dielectric layer.

A metal resistor and resistor material are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu) infused with at least one of silicon (Si), nitrogen (N.sub.2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W), and aluminum infused with at least one of silicon (Si), nitrogen (N.sub.2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W). The resistor material may include one of: copper (Cu) infused with at least one of silicon...

A back end of the line (BEOL) structure of a semiconductor device is presented. In one embodiment, the structure may include a first liner layer disposed on an intermediate interconnect structure, the intermediate interconnect structure having an opening disposed between two surfaces of a dielectric material, wherein the first liner layer is in direct contact with at least a portion of a conductive wiring material of an underneath interconnect layer; a noble metal layer disposed on the first lin...

A metal resistor and resistor material and method of forming the metal resistor are disclosed. The metal resistor may include an infused metal selected from the group consisting of: copper (Cu) infused with at least one of silicon (Si), nitrogen (N.sub.2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W), and aluminum infused with at least one of silicon (Si), nitrogen (N.sub.2), carbon (C), tantalum (Ta), titanium (Ti) and tungsten (W). The method is less complex than conventional proc...