Introduction of a liquefied gas solution for deposition of a material on a semiconductor substrate. The substrate can have a trench etched thereinto with the solution including ions of the material to be deposited in the trench. The substrate can have a barrier layer at its surface prior to introduction of a liquefied gas solution including ions of a metal to be deposited above the barrier. A material layer to be formed on the substrate can be a tantalum barrier, a copper layer or other semicond...

A method for filling, with a conductive material, a high aspect ratio opening such as a via hole or a trench opening within an integrated circuit minimizes the formation of voids and seams. This conductive material such as copper which fills the high aspect ratio opening is amenable for fine line metallization. The method of the present invention includes steps for enhancing copper plating processes such as copper electroplating or copper electroless plating. This method includes a first step of...

A method for sorting nanotubes and forming devices based upon selective nanotube types is provided. The disclosure provides methods of sorting semiconducting nanotubes useful in the formation of field effect transistors, diodes, and resistors. The disclosure also provides methods of sorting metallic nanotubes useful in the formation of interconnect devices.

Numerous embodiments of a method to assemble nano-materials on a platform are described. In one embodiment, a nano-material is functionalized with a first bondable group. The functionalized nano-material is disposed on an assembly platform having an electrode to form a first layer. Additional layers of the nano-material may be formed above the first layer to form a semiconductor device. In one embodiment, the nano-material may be a carbon nanotube.

One or more semiconducting or conducting regions of a device such as a transistor may comprise molecular materials such as nanotubes or similar materials. Regions of a conductive alignment pattern used to align the nanotubes may be proximate to one or more ends of the nanotube. Additionally, a contact region may be proximate to each end of the nanotube to provide electrical contact to the nanotube. Nanotubes or the like may be in communication with device interconnection regions on a device subs...

Embodiments of a composite carbon nanotube structure comprising a number of carbon nanotubes disposed in a matrix comprised of a metal or a metal oxide. The composite carbon nanotube structures may be used as a thermal interface device in a packaged integrated circuit device.

Embodiments of a composite carbon nanotube structure comprising a number of carbon nanotubes disposed in a matrix comprised of a metal or a metal oxide. The composite carbon nanotube structures may be used as a thermal interface device in a packaged integrated circuit device.

Some embodiments of the present invention include fabricating carbon nanotube bundles with controlled length, diameter, and metallic contacts.

A method of fabricating an integrated circuit comprises forming or providing a solution containing carbon nanotubes and forming a metal layer utilizing the solution.

A via structure includes a barrier layer disposed between a via plug and an insulating layer surrounding a via hole to impede diffusion of conductive material from the via plug into the insulating layer. The barrier layer is deposited to cover the via side wall after the via hole is formed. The via hole is then filled with a via plug comprised of a conductive material such as copper that is amenable for fine line metallization with submicron and nanometer dimensions. The diffusion rate of copper...