The picture quality of a solid-state image sensing device is improved and its manufacturing process is simplified. The solid-state image sensing device comprises an interlayer film having a recess above a light receiving sensor unit as well as an intra-layer color filter having a protuberance formed by filling the recess in accordance with the curved surface of the recess, the protuberance having a curvature required for collecting the incident light onto the light receiving sensor unit.

A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, wh...

A first correlation is obtained which is a correlation between latent image height produced after exposure on a resist layer, and resist pattern linewidth for a given length of develop time. Additionally, a second correlation is obtained which is a correlation between develop time for each exposure energy dose and resist pattern linewidth. The height of a latent image produced on an actually exposed resist layer is determined. From the first correlation, an estimated resist pattern linewidth, wh...

A method of producing a color filter composed of filter elements of RGB is used for a solid-state imaging device, which color filter is capable of improving the resolution of the device. The method includes the steps of: forming a filter layer of a second color in a region in which a filter element of a first color is to be formed; and stacking a filter layer of a third color different from the second color on the filter layer of the second color. In the method, the color filter is preferably co...

It is an object of the present invention to provide a method for manufacturing a semiconductor device that can suppress generation of a crack and peeling in a resin BM and deterioration of coverage of an upper layer of the resin BM, even if a black resin is used as a material of the resin BM in order to improve a contrast of brightness and a contrast of color. As a method for manufacturing a semiconductor device, a non-photosensitive black resin layer is formed over a substrate, a positive resis...

A positive type colored photosensitive resin composition containing an alkali-soluble copolymer resin which comprises repeating units derived from styrene and repeating units derived from hydroxystyrene, a ratio (molar ratio) of the latter repeating units to the former repeating units is from 1:0.7 to 1:20 and has a polystyrene-converted weight average molecular weight of 6,000 to 15,000.

A color filter array having a blue filter layer on a substrate wherein the blue filter layer comprises triallylmethane dye showing its absorption maximum at a wavelength within the range of from 550 to 650 nm; and has a transmittance at a wavelength of 450 nm of 70% or more and that at 650 nm of 5% or less is provided; and the color filter array shows excellent spectroscopic characteristics with respect to blue light and has a blue filter layer excellent in light fastness.

A color filter array having a red filter layer on a substrate wherein the red filter layer comprises a xanthene dye having its absorption maximum at a wavelength of 500 to 600 nm, and a pirazolone azo dye having its absorption maximum at a wavelength of 400 to 550 nm; and has a transmittance at a wavelength of 535 nm of 1% or less and that at 650 nm of 90% or more; and the color filter array shows excellent spectroscopic characteristics with respect to red light and has a red filter layer excell...

A color filter array having a blue filter layer on a substrate wherein the blue filter layer comprises triallylmethane dye showing its absorption maximum at a wavelength within the range of from 550 to 650 nm; and has a transmittance at a wavelength of 450 nm of 70% or more and that at 650 nm of 5% or less is provided; and the color filter array shows excellent spectroscopic characteristics with respect to blue light and has a blue filter layer excellent in light fastness.

A color filter array having a green filter layer on a substrate wherein the green filter layer comprises a copper phthalocyanine dye having its absorption maximum at a wavelength of 600 to 700 nm, and a pyridone azo dye having its absorption maximum at a wavelength of 400 to 500 nm; and has a transmittance at a wavelength of 450 nm of 5% or less and that at 535 nm of 62% or more is provided; and the color filter array shows excellent spectroscopic characteristics with respect to green light and ...