Methods and apparatus, including computer program products, to assemble a collection of documents according to a document list. The document list represents documents to be included in the collection, and includes multiple entries that identify document templates. Each document template includes instructions that a web server can execute to generate a web document based on one or more parameters. A web document corresponding to each of the multiple entries is requested; the requested web documen...

A memory cell of a semiconductor dynamic random access memory device requires a bit line contact hole open to a drain region of a cell transistor for connecting a bit line to the drain region and a node contact hole open to a source region for connecting a storage electrode of a stacked capacitor to the source region, and the bit line contact hole and the node contact hole are plugged with silicon layers; the silicon layers are epitaxially grown from the source and drain regions over an oxide-en...

An asymmetric dioxazine compound of the following formula: ##STR1## wherein R is sulfo, halogeno, alkoxy, alkyl or carboxy; R.sub.1 and R.sub.2 are each hydrogen or alkyl; R.sub.3 is hydrogen, alkyl or acyl; X.sub.1 and X.sub.2 are each hydrogen, halogeno, alkyl, alkoxy or phenoxy; Y is aliphatic amino having a vinylsulfonyl or .beta.-substituted ethylsulfonyl fiber-reactive group; and Q is unsubstitued, substituted or cyclic amino; is useful for dyeing or printing fiber materials blue with exce...

On a main surface of a silicon substrate of one conductivity type, a diffusion layer of the opposite conductivity type is formed, and the main surface of the silicon substrate is covered by an insulator film. The insulator film is formed with a contact hole which extends to reach the diffusion layer of the opposite conductivity type. A contact plug is provided in the contact hole. The contact plug fills the contact hole and comprises a first silicon layer of the opposite conductivity type direct...

A silicon layer serving as a contact plug directly connected to a diffusion layer of a MOS transistor is provided. On a surface of an N.sup.- type diffusion layer in self-alignment with a silicon nitride layer spacer and a field oxide layer, an N.sup.+ type monocrystalline silicon layer formed by anisotropic selective epitaxial growth method is directly connected. The surface of the N.sup.+ type monocrystalline silicon layer is directly connected to an N.sup.+ type monocrystalline silicon layer ...

On a main surface of a silicon substrate of one conductivity type, a diffusion layer of the opposite conductivity type is formed, and the main surface of the silicon substrate is covered by an insulator film. The insulator film is formed with a contact hole which extends to reach the diffusion layer of the opposite conductivity type. A contact plug is provided in the contact hole. The contact plug fills the contact hole and comprises a first silicon layer of the opposite conductivity type direct...

A polarizing plate with optical compensation layers that performs a wide viewing angle compensation with respect to a liquid crystal cell, allows circularly polarized light to be obtained over a wide range of light wavelengths, contributes to the reduction in thickness, prevents thermal irregularity from occurring, and can effectively prevent light leakage from occurring in a black display. The polarizing plate includes a polarizer, a first optical compensation layer, and a second optical compen...