A superconducting apparatus includes a cryogenic chamber, superconducting equipment contained in the cryogenic chamber and a lead secured to the cryogenic chamber and connected to the superconducting equipment. A structured member for a prevention of an electric discharge is provided between the lead and an area for securing the lead of the cryogenic chamber. The structured member for the prevention of electric discharge may be a laminate of a conducting layer and a insulating layer having recov...

Provided is a metal oxide material represented by the composition formula of Ln.sub.a Sr.sub.b Cu.sub.3-x M.sub.x O.sub.c, where 2.7.ltoreq.a+b.ltoreq.3.3; 0.8 .ltoreq.a.ltoreq.1.2; 6.ltoreq.c.ltoreq.9; and 0.05 .ltoreq.x.ltoreq.0.7, Ln is at least one element selected from the group of elements of Y and lanthanoids or an atomic group consisting of said elements, and M is at least one element selected from the group of elements of Ti, V, Ga, Ge, Mo, W and Re or an atomic group consisting of said...

A metal oxide manufacturing method includes the steps of preparing the metal oxide expressed by a general formula of AXBYCZDn, (where A represents at least one element selected from a group consisting of a rare earth element, yttrium and an element obtained either by substituting part of rare earth elements with alkali metals or alkali earth metals or by substituting part of yttrium with alkali metals or alkali earth metals, B represents an alkali earth metal, C represents copper or an element o...

An emission current (Ie1) emitted by the electron-emitting device and/or a device current (If1) flowing through the electron-emitting device are measured when a voltage (V1) is applied to the electron-emitting device and an emission current (Ie2) emitted by the electron-emitting device and/or a device current (If2) flowing through the electron-emitting device are measured when the voltage (V1) is applied to the electron-emitting device after the measurement step. A voltage (V2) higher than the v...

A display apparatus and a method for driving the display apparatus that are capable of suppressing image quality degradation resulting from delay in sampling pulses or from waveform rounding thereof and image quality degradation caused by coupling between the signal line and the common line and that between the signal line and the scan line even when the simultaneous sampling number is increased. The start pulse HST has a pulse width that includes a plurality of pulse widths of the clock pulses ...

A substrate for an electron source to be used for forming the electron source, the electron source and an image forming apparatus in which the substrate has been used, and manufacturing method thereof. The substrate to form the electron source in which an electron emission device is disposed includes a substrate containing Na, a first layer wish SiO.sub.2 as a main component having been formed on the substrate, and a second layer containing electron conductive oxide. The electron source includes...

First and second aligning portions each having a plurality of parallel downwardly sloped grooves, are inclinedly arranged to communicate with a chip box containing a plurality of chip parts at random. The chip box and the first aligning portion are supplied with vibration, to serially align the chip parts in the grooves of the first aligning portion. The chip parts are then received in the grooves of the second aligning portion. The first of the chip parts thus received in the second aligning po...

Provided is a metal oxide material represented by the composition formula of Ln.sub.a Sr.sub.b Cu.sub.3-x M.sub.x O.sub.c, where 2.7.ltoreq.a+b.ltoreq.3.3; 0.8.ltoreq.a.ltoreq.1.2; 6.ltoreq.c.ltoreq.9; and 0.05 .ltoreq.x.ltoreq.0.7, Ln is at least one element selected from the group of elements of Y and lanthanoids or an atomic group consisting of said elements, and M is at least one element selected from the group of elements of Ti, V, Ga, Ge, Mo, W and Re or an atomic group consisting of said ...

In an electron-emitting device having a pair of electroconductors arranged on a substrate at an interval, a top of one electroconductor is higher than that of the other electroconductor and a groove extending from the interval region toward a position under a region where the one electroconductor is come into contact with the substrate is formed on the substrate. Deterioration of the electron-emitting device due to collision of charged particles is suppressed by the asymmetrical electron-emittin...

Provided is a manufacturing method capable of manufacturing an electron-emitting device in which a variation in device current at the time of manufacturing is suppressed and thus uniformity thereof is high. The electron-emitting device includes a substrate, a first conductor, and a second conductor. The substrate is composed of: a member which contains silicon oxide as a main ingredient, Na.sub.2O, and K.sub.2O and in which a molar ratio of K.sub.2O to Na.sub.2O is 0.5 to 2.0; and a film which c...