A distributed search system that includes a plurality of agents connected on a network that includes an information resource provider. Each of the agents stores information corresponding to information resources in a storage device of a nearest agent as advertisement information. The stored advertisement information includes cost information. An agent which receives the advertisement information transfers the advertisement information to other agents in a range determined on the basis of the cos...

A distributed search system that includes a plurality of agents connected on a network that includes an information resource provider. The information resource provider registers information corresponding to information resources to his nearest agent. The agent stores that information in its storage device and transfers it to the neighboring agents as advertisement information. The transferred advertisement information includes cost information. The agents which receive the advertisement informa...

An object of this invention is to provide a simple construction for preventing a collision of the cutter with the surface of paper at a high speed, and the construction provides a controller 20 that minimizes the impression voltage to a cutter drive actuator 38 in the first stage and gradually increases by stages thereafter. After the impression voltage for descending of the cutter to the cutter drive actuator 38 arrives at a maximum set voltage, the controller 20 switches the impression voltage...

A metal element density is lowered in a crystalline silicon film obtained by four hour treatment at about 550.degree. C. by using a catalyst metal which accelerates crystallization. At the same time, a crystalline silicon film can be obtained which has a high crystallinity. For this purpose, extremely oxide film 13 is formed on an amorphous silicon film formed on this glass substrate in the beginning. An aqueous solution of acetate added with 10 to 200 ppm (need adjustment) of catalyst element l...

A process for fabricating a semiconductor device comprising the steps of: introducing into an amorphous silicon film., a metallic element which accelerates the crystallization of the amorphous silicon film; applying heat treatment to the amorphous silicon film to obtain a crystalline silicon film; irradiating a laser beam or an intense light to the crystalline silicon film; and heat treating the crystalline silicon film irradiated with a laser beam or an intense light.

A metal element density is lowered in a crystalline silicon film obtained by four hour treatment at about 550.degree. C. by using a catalyst metal which accelerates crystallization. At the same time, a crystalline silicon film can be obtained which has a high crystallinity. For this purpose, extremely oxide film 13 is formed on an amorphous silicon film formed on this glass substrate in the beginning. An aqueous solution of acetate added with 10 to 200 ppm (need adjustment) of catalyst element l...

There is provided a technique for fabricating a thin film transistor having excellent performance. A configuration is employed in which when the thin film transistor is in an on-state, the flowing direction of the on-current coincides with the direction of crystal growth. With such a configuration, grain boundaries of the crystalline silicon in the active layer will not block the on-current. Further, when the thin film transistor is in an off-state, the off-current is always orthogonal to the gr...

When an inner wall of a cylinder head is viewed along an axis of a cylinder, a line that passes through a center of a fuel injection port and a center of a valve opening adjacent to the injection port is defined as a first line, and a line that is perpendicular to the first line is defined as a second line. A notch is formed in a part of the inner wall that defines the injection port. Specifically, when the inner wall is divided into sections by the second line, the notch is located in the secti...

The present invention has as its object to provide a technique of forming a surface of a thin-film semiconductor having corrugations and smoothing the same. This is achieved by a fabrication method for thin-film semiconductors which smooths a surface of a silicon film having corrugations, comprising the steps of forming an oxidized silicon film on the surface of the silicon film, removing the oxidized silicon film which has been formed in protruding portions among the corrugations and exposing a...

A semiconductor device having a CMOS structure, wherein, in manufacturing a CMOS circuit, an impurity element which imparts p-type conductivity to the active layer of the p-channel type semiconductor device is added before forming the gate insulating film. Then, by applying thermal oxidation treatment to the active layer, the impurity element is subjected to redistribution, and the concentration of the impurity element in the principal surface of the active layer is minimized. The precise contro...