In a liquid crystal display device of an active matrix type, at first, an initialization signal voltage having a voltage value equal to or higher than the maximum voltage value of a display signal is applied to display pixels in a signal application period in a field period. The display signal is thereafter applied. As a result, the change amount of the voltage applied to liquid crystal due to the field-through voltage in relation to a gate pulse can be arranged to be substantially constant, and...

A color liquid crystal display device includes a first substrate having a surface on which a transparent electrode and a first aligning film covering the transparent electrode are arranged, a second substrate having an electrode arranged to oppose the first substrate, and a second aligning film covering the electrode, the electrode having a plurality of pixels formed on its inner surface, and the pixels being formed in an area opposing the transparent electrode, a liquid crystal layer sandwiched...

A color liquid crystal display device includes a front substrate having a surface on which a plurality of pixel electrodes are arranged in the form of a matrix, and two-terminal nonlinear resistor elements are arranged to correspond to the pixel electrodes. An aligning film covers the pixel electrodes and the nonlinear resistor elements. A rear substrate opposes the front substrate and has an inner surface on which counter electrodes are arranged to oppose the pixel electrodes, for forming a plu...

The periphery of a color filter element formed on a transparent glass substrate and the periphery of a pixel electrode formed on the color filter element are made to overlap with gate lines and drain lines. Black matrices are formed between adjacent color filter elements, on neighboring color filter elements, and on pixel electrodes. In this case, the opening of the black matrix slightly encroaches upon the gate lines and the drain lines. As a result, the area surrounded by the gate lines and th...

A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low...

According to the present invention, a channel protection film is formed a little smaller in area than the gate electrode formed of a shielding metal film. A semiconductor thin film is formed such that the thickness is set not less than 200 .ANG. and less than 400 .ANG.. A distance A between the edge of the gate electrode in the channel length direction and the edge of the channel protection film is set around 0.2-1.2 .mu.m, and a distance B between the edge of the gate electrode in the channel w...

A thin film transistor including a thin semiconductor film which has a central portion as a channel region, with the side portions of the semiconductor film except for the channel region being a source and a drain regions which includes n-type impurities such as phosphorus ions of high concentration (3.times.10.sup.15 atoms/cm.sup.2), and a low concentration region provided between the channel region and each of the source and drain regions including p-type impurities such as boron ions of a low...

A display device includes a substrate, a plurality of scanning lines formed in parallel with each other on the substrate in one direction, a plurality of data lines formed in parallel with each other on the substrate in orthogonal to the scanning lines, a thin film transistor being formed in the vicinity of each intersection of the scanning lines and the data lines and having a semiconductor thin film, a gate electrode connected to one of the scanning lines, a source electrode, a drain electrode...

A thin-film memory element made by the technique of forming thin film and functioning as a thin-film transistor. The memory element has two gate-insulating films, and two gate electrodes formed on the gate-insulating films, respectively. The first gate-insulating film can accumulate electrical charge, whereas the second gate-insulating film cannot. The gate electrode on the first gate-insulating film is used as write/erase electrode, and the gate electrode on the second gate-insulating film is u...

An active matrix display panel includes a plurality of pixel electrodes formed in a matrix manner, a plurality of switching elements connected with these pixel electrodes, a plurality of scan lines for supplying a scan signal to thin film transistors, and a plurality of data lines for supplying a display data signal. Components except for the pixel electrodes are covered with an overcoat film. Since a contact hole extending through this overcoat film and a contact hole extending through the over...