A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (V.sub.f) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide substrate with a nonselective etch to remove both surface and sub-surface damage, thereafter etching the same surface with a selective etch to thereby develop etch-generated structures from at least any basal plane dislocation reaching the...

A method is disclosed for preparing a substrate and epilayer for reducing stacking fault nucleation and reducing forward voltage (V.sub.f) drift in silicon carbide-based bipolar devices. The method includes the steps of etching the surface of a silicon carbide substrate with a nonselective etch to remove both surface and subsurface damage, thereafter etching the same surface with a selective etch to thereby develop etch-generated structures from at least any basal plane dislocation reaching the ...

A housing assembly for an induction heating device defines a processing chamber and includes a susceptor and a thermally conductive liner. The susceptor surrounds at least a portion of the processing chamber. The thermally conductive liner is interposed between the susceptor and the processing chamber. The liner is separately formed form the susceptor. The liner is removable from the susceptor without requiring disassembly of the susceptor.

A gas driven rotation apparatus for use with a flow of drive gas includes a base member having an upper surface, a main platter overlying the upper surface of the base member, and a satellite platter overlying the main platter. The apparatus is adapted to direct the flow of drive gas between the upper surface of the base member and the main platter such that the main platter is rotated relative to the base member by the flow of drive gas. At least a portion of the flow of drive gas is directed f...

Single crystal silicon carbide epitaxial layer on an off-axis substrate are manufactured by placing the substrate in an epitaxial growth reactor, growing a first layer of epitaxial silicon carbide on the substrate, interrupting the growth of the first layer of epitaxial silicon carbide, etching the first layer of epitaxial silicon carbide to reduce the thickness of the first layer, and regrowing a second layer of epitaxial silicon carbide on the first layer of epitaxial silicon carbide. Carrot d...

An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then ...

A heating device for controllably heating an article defines a processing chamber to hold the article and includes a housing and an EMF generator. The housing includes a susceptor portion surrounding at least a portion of the processing chamber, and a conductor portion interposed between the susceptor portion and the processing chamber. The EMF generator is operable to induce eddy currents within the susceptor portion such that substantially no eddy currents are induced in the conductor portion....

A gas driven rotation apparatus includes a base member and a platter. The base member includes an upper surface and a mounting portion formed in the upper surface. The mounting portion includes an inner recess and an annular outer channel surrounding and spaced apart from the inner recess. A plurality of drive channels extend generally radially outwardly from the inner recess to the outer channel. The drive channels are substantially straight. A drive gas entrance passage extends through the bas...

An epitaxial silicon carbide layer is fabricated by forming first features in a surface of a silicon carbide substrate having an off-axis orientation toward a crystallographic direction. The first features include at least one sidewall that is orientated nonparallel (i.e., oblique or perpendicular) to the crystallographic direction. A first epitaxial silicon carbide layer is then grown on the surface of the silicon carbide substrate that includes first features therein. Second features are then ...

A method for controlling parasitic deposits in a deposition system for depositing a film on a substrate, the deposition system defining a reaction chamber for receiving the substrate and including a process gas in the reaction chamber and an interior surface contiguous with the reaction chamber, includes flowing a buffer gas between the interior surface and at least a portion of the process gas to form a gas barrier layer such that the gas barrier layer inhibits contact between the interior surf...