A semiconductor integrated-circuit device includes both conventional internal circuitry, and a selection circuit that provides external output of signals from the internal circuitry under control of a selection signal. In a parallel test system, the output terminals of a plurality of devices under test are connected to a single set of tester input terminals, at which response signals are received from each device in turn. Alternatively, each device has an internal test circuit that carries out t...

The wrong operation preventing circuit is supplied for preventing such accidents as destruction of data, a memory cell section, a sense amplifier and a operation judgement section. The memory cell section is placed at a furthest position from the sense amplifier, the sense amplifier detects the change of voltage on bit line, and the operation judgement section monitors the output of the sense amplifier and outputs a signal for controlling whether the CPU needs to reset.

A charge pump circuit 203 boosts a power supply voltage to generate a high voltage VPP in response to clocks CK, CK/ supplied from an oscillation circuit 202. A voltage detecting circuit 205 discriminates whether the high voltage VPP reaches a desired voltage value or not and represents it by discrimination signals LVPP, DIS/. If the high voltage VPP does not reach the desired voltage value, a writing control circuit 201 stops the oscillation circuit 202 from effecting its oscillating operation ...

An IC card having means for protecting erroneous operation. A circuit for detecting incomplete contact is provided.

A switch circuit includes an input terminal, an internal circuit, and first and second MOS transistors. The input terminal receives an input signal. The internal circuit executes a predetermined function. The first MOS transistor is a first conductivity type MOS transistor. The first MOS transistor is coupled between the input terminal and the internal circuit, and has a control gate receiving a control signal, a first electrode coupled to the input terminal and a second electrode. The second MO...

Disclosed herein is a dual phase stainless steel suitable for use in sour wells. It comprises 0.06-0.20% C, .ltoreq.1.0% Si, 2.5-4% Mn, 20-27% Cr, 5-8% Ni, 2.5-4% Mo, 0.3-2% Cu, 0.1-0.25% N, 40-60% ferrite and the balance Fe and inevitable impurities. It may further contain one or more metals selected from Ti, Nb and V in a total amount of 0.1% to 0.5%. The dual phase stainless steel is excellent in proof strength, tensile strength and elongation and is capable of exhibiting good corrosion resis...

In a nonvolatile memory device or a microcomputer with a nonvolatile memory, data errors arising from loss of charge in the floating gates of memory cells are detected and corrected by applying two different sense voltages to the memory cells and comparing the outputs. Instead of using a cumbersome error-correcting code, this error-correcting scheme requires only one parity bit per word, yet it can detect and correct errors in any odd number of bits. Benefits include reduced chip size and longer...