Two parallel and coaxial flange plates which are driven separately in rotation carry reels mounted in uniformly spaced relation about the common axis of the flange plates. Threads or ribbons are delivered from the reels and wound on a cylindrical element which is displaced continuously along the axis of the flange plates. Each flange plate is associated with a parallel and coaxial annular member which is mounted upstream of the reels with respect to the direction of displacement of the cylindric...

A method is provided whereby, before being subjected to a low rate voice coding, an incoming digital voice signal is chronologically segmented into blocks, the blocks are broken down respectively, in chronological order, into frequency components by a transformation in the frequency range and the frequency components are multiplied by weight factors depending on the frequency and modifiable in time, a frequency component being multiplied by the last weight factor calculated for the frequency com...

A reaction vessel for use in photoelectrochemical reactions includes as its reactive surface a metal oxide porous ceramic membrane of a catalytic metal such as titanium. The reaction vessel includes a light source and a counter electrode. A provision for applying an electrical bias between the membrane and the counter electrode permits the Fermi levels of potential reaction to be favored so that certain reactions may be favored in the vessel. The electrical biasing is also useful for the cleanin...

An oligomerization catalyst for olefins having from 2 to 6 carbon atoms is produced by treating aluminum oxide with a nickel compound and a sulfur compound, either simultaneously or firstly with the nickel compound an then with the sulfur compound, and subsequently drying and calcining the resulting catalyst, wherein a molar ratio of sulfur to nickel in the finished catalyst of from 0.25:1 to 0.38:1 is set in this way. The catalyst and its use are also described.

A process for the image sharpening of a photographic image with a multitude of image elements is disclosed, wherein a correction mask for the change of the image sharpness is determined from the image data representing the image to be corrected, whereby the elements of the correction mask for the change of the image sharpness locally describe the degree of contrast change to be carried out for the individual image elements, and whereby additional information relating to the image is used for the...

A rack for a switchgear cabinet with vertical and horizontal profiled frame sections, wherein two of the horizontal profiled frame sections are connected by a corner connector to at least one rack corner area. Two horizontal profiled frame sections are connected with each other, forming a corner angle and having a receptacle, which is open toward the exterior of the rack. The receptacle is symmetrical with respect to a bisecting line dividing an angle of the corner angle. A corner connector is f...

Each of the detectors of the inventory are subjected to an identical flat field exposure to generate a radiation mage in each of the detectors, from the radiation images the overall field distribution is determined and neutralized in the images, next the non-uniformity is calculated.

A dorsally placed transacrally fixed surgical implant is described for correcting and supporting the spinal column with the implant being particularly useful for aligning and stabilizing the lumbosacral junction. Direct sacral fixation is achieved utilizing a contoured metallic base plate that is firmly fixed to the sacrum by means of a plurality of screws, which screws are angularly disposed with respect to one another to maximize retention of the base plate on the sacrum. A pair of spine engag...

A device for use in a thermal annealing process for a wafer (T) of material chosen among the semiconductor materials for the purpose of detaching a layer from the wafer at an weakened zone. During annealing, the device applies (1) a basic thermal budget to the wafer, with the basic thermal budget being slightly inferior to the budget necessary to detach the layer, this budget being distributed in an even manner over the weakened zone; and (2) an additional thermal budget is also applied to the w...

A method for heat treatment of a semiconductor wafer placed on a support. The method includes subjecting the wafer to a heat treatment with a slow temperature rise from an initial temperature to a treatment ending temperature, and minimizing slip lines that would otherwise result in the wafer from the heat treatment by introducing at least one temperature plateau of constant temperature and of predetermined duration in the heat treatment before reaching the treatment ending temperature. The meth...