A differential input stage for an operational amplifier includes a transistor pair differentially connected and supplied with tail current through a series resistor. The tail current is supplied by a pair of current amplifiers having their outputs coupled to the tail current resistor. The current amplifier inputs are coupled to the bases of the input transistor pair so that they are differentially driven. If the tail current resistor is properly selected the differential output current is a line...

A power transistor design that eliminates thermally initiated secondary breakdown in fast, double-diffused transistors is described. The power dissipation capability is made independent of collector voltage, avoiding safe area restrictions below 0.9 BV.sub.CBO.

Bandgap voltage reference circuits have been developed for integrated circuit applications. Typically, a negative temperature coefficient first voltage is developed related to the base to emitter potential of a transistor. A positive temperature coefficient second voltage related to the difference in base to emitter potential between two transistors operating at different current densities is developed and combined with the first voltage so as to produce a temperature compensated reference volta...

An integrated circuit gain block is obtained by cascading a common collector stage with a complementary common emitter stage. The current density of the common emitter transistor is made sufficiently greater than that of the common collector transistor so that the common emitter V.sub.BE lowest worst case value is higher than the common collector V.sub.BE highest worst case value. This makes the circuit manufacturable in integrated circuit form and permits the circuit to operate from a single po...

A circuit arrangement including first and second output transistors, a sensor diode means, and a circuit means. The first output transistor drives the load positive. The second output transistor drives the load negative. The sensor diode means senses the current in the collector of the first output transistor. The circuit means is connected in circuit with the sensor diode means and the base of the second output transistor for establishing the quiescent current level of the first output transist...

A class B IC transistor output stage, using a pair of NPN transistors, is described. A quasi-complementary transistor is employed to establish the stage quiescent bias. An NPN bias transistor is coupled to the output sink transistor and is driven from the emitter of the input driver transistor. Therefore, the input signal is coupled to apply the signal directly to the base of the sink transistor as well as to the source transistor. This feedforward arrangement by-passes the PNP transistor when a...

A thermal shutdown circuit for use with a high power transistor which incorporates a sense emitter. A differential amplifier is driven from the transistor base and the sense emitter and has an output that is coupled to the power transistor base. When the sense emitter potential exceeds the base potential, the amplifier output will pull the base down so as to limit the current in the power transistor. For a silicon transistor, the circuit will act to limit the hottest portion of the sense emitter...

A power transistor structure that is well suited to both switching and lower-voltage linear applications is displayed. A key element of the design is thin-film ballast resistors that act as a second level of interconnect. They can be connected to or insulated from the overlying metal and the underlying silicon, except where contact holes are provided. Thus, an intricate structure having small emitters with individual ballast resistors can be fabricated below the wide metal busses required to car...

A lateral transistor device constructed to have a single emitter region and a single base region operatively associated with a plurality of collector regions. Each of the various collector regions forms a separate PN junction with the base region which is dimensioned and disposed with respect to the base-emitter junction to provide a predetermined portion of the total available collector current.

A double diffused transistor structure having a base region which is sufficiently thin so that the reverse breakdown voltage between the emitter and the collector (BV.sub.eco) is less than the reverse breakdown voltage between the emitter and the base (BV.sub.ebo). The transistor structure is connected in an upside-down fashion as a two-terminal network, the terminals being formed by the emitter and the collector in a manner similar to that heretofore employed with Zener diodes to provide a "rea...