The present invention relates to a diode, and has an object to simultaneously implement a high di/dt capability, a low reverse recovery loss and a low forward voltage and to suppress generation of voltage oscillation. In order to achieve the above-mentioned object, life time killers are selectively introduced into a semiconductor substrate (20) comprising a P layer (1), an N.sup.- layer (21) and an N.sup.+ layer (3). A density of the introduced life time killers is the highest in a first region ...

A diode suited for absorbing a surge which includes a semiconductor substrate, a pn junction defined in the semiconductor substrate, and an exothermic body adjacent to the pn junction which leads the pn junction to the Zener breakdown under an overcurrent is disclosed. This diode is improved in a characteristic against a surge utilizing the secondary breakdown and prevents the yield from lowering due to inconstancy in resistivity of the wafer used.

Disclosed is an inventive diode which can reduce a stray capacity to improve various characteristics thereof, in which a dielectric layer, a conductive layer and a second dielectric layer are respectively formed by deposition in this order on an upper face of a semiconductor substrate excluding a central portion of an exposed surface of a P-type region. Then, an anode side electrode is formed extending from the exposed surface of the P-type region to the upper face of the second dielectric layer...

Implemented is a diode which controls an energy loss produced during a reverse recovery operation and generates an oscillation of an applied voltage with difficulty even if a reverse bias voltage has a great value. An N layer 101 and a P layer 102 are formed in a semiconductor substrate such as silicon. Furthermore, a cathode side P layer 103 is also formed facing a cathode electrode 105 in a position on the N layer 101 that a depletion layer extended during application of a reverse bias voltage...

A diode which eliminates generation of local avalanche breakdown phenomenon when static surges in the backward direction are applied and withstands electrostatic breakdown. A P-type impurity diffused region of high concentration as an anode and an N-type impurity diffused region of high concentration as a cathode that surrounds the P-type impurity diffused region, are formed on the surface of an N-type silicon well region. The surface of the N-type silicon well region on which the impurity diffu...

A diode has a semiconductor layer of a first conductive type having a first principal plane and a second principal plane facing the first principal plane; a first impurity layer of a second conductive type which is opposite to said first conductive type, said first impurity layer being selectively formed on said first principal plane of said semiconductor layer; a second impurity layer of the first conductive type which is selectively formed on said first principal plane of said semiconductor la...

A diode structure is provided. The diode structure comprises a first conductive type substrate, a second conductive type first well region, a first conductive type second well region, a second conductive type first doped region, a first conductive type second doped region and a second conductive type third doped region. The first well region is located within the substrate and the second well region is located within the first well region. The first doped region is located within the first well ...

Connector for in-line electrical device utilizes a pair of binding post type terminals mounted in a housing. The posts have coplanar diametric slots profiled in free ends thereof and lying in the longitudinal center plane of the housing. Caps profiled to screw onto the posts for termination each have an axial dowel therein sized to prevent the slots from collapsing as the caps are screwed down.

A multi-layer laser diode structure comprised of a semiconductor material, for example, gallium-aluminum-arsenide, having varying amounts of a dopant, such as aluminum, in the respective layers, includes a cover layer which is transparent to laser radiation and provided for total reflection of radiation generated in a laser-active layer positioned below the cover layer and an additional layer positioned on top of the cover layer and supporting a contact on its exterior surface. The additional la...

A Zener diode having a surface-adjoining first region of a first conductivity type, a second region of the second opposite conductivity type situated within the first region, and a third region of the first conductivity type which is situated at a distance from the surface and which is bounded entirely by the first and the second region and is more highly doped than the first region, the third region being overlapped by the second region on all sides. According to the invention the first region ...