A method and system to use voltage isolated and floating differential output amplifiers wired in series and parallel to achieve arbitrary output drive voltage and current for the applications load. Embodiments use multiple voltage-isolated and linearized devices to enable dynamically modifiable, Class A, Class B, and Class AB topologies of predetermined voltage and current performance. Embodiments can correct an output by linearizing one or more devices in a circuit by utilizing a linearization ...

A high voltage transistor with high switching speed is provided by a semiconductor body having a thin internal portion and a thick integral peripheral portion. The thin internal portion has a substantially uniform width of greater than about 28 microns and oppositely facing surface areas each of greater than about 0.10 cm.sup.2. The thick peripheral portion has a width greater than about 150 microns and an annular dimension, i.e. radial width, greater than 10 microns but less than the correspond...

A high resolution or high maximum bandwidth monochromator is provided with certain control means for controlling one jaw of an intermediate slit pair, and other control means for independently controlling the jaws in each pair of entrance, exit and intermediate slits, the monochromator being useful for exploratory research work as well as routine analysis.

A structural steel which possesses both high strength and high toughness and has particular application for cryogenic uses. The steel is produced by the utilization of thermally induced phase transformation following heating in a three-phase field in iron-rich alloys of the Fe-Ni-Ti system, with a preferred composition of 12 percent nickel, 0.5 percent titanium, the remainder being iron.

A method and system to use voltage isolated and floating differential output amplifiers wired in series and parallel to achieve arbitrary output drive voltage and current for the applications load. A second embodiment uses multiple matched voltage-isolated and floating differential output amplifiers in a single chassis to enable selection between a multi-channel amplifier and a high current and/or high voltage mono amplifier. A third embodiment uses a step-up transformer and paralleled unity-gai...

A high power frequency device such as a thyristor or transistor comprises a monolithic body consisting of an emitter assemblage laminated to a base-collector assemblage. The emitter assemblage is a semiconductive wafer of given conductivity type having a plurality of mesas adjacent one surface; a high resistivity ballast layer in each mesa; an insulating film on said one surface and around each mesa; and a layer of high conductivity material, such as heavily doped semiconductive material of oppo...

A high pressure/temperature device for carrying out the synthesis of superhard materials, such as diamond and cubic boron nitride, the device consisting of two dies having recesses in closing faces, said recesses forming, in combination, a high-pressure chamber which accommodates a container charged with a reaction mixture. In each die, the recess is made in the form of a truncated cone conjugated with a sphere or in the form of a hyperboloid of revolution.

A valve and concomitant method of controlling flow of a fluid with a valve comprising isolating a fluid path from a valve stem with a diaphragm in a valve body, blocking the fluid path with a plunger having a stroke of less than approximately 500 micrometers, driving the plunger with an actuator, and operating the valve at a frequency of at least approximately 20 Hz but with a flow of at least approximately 5.0E-04 kg/sec.

A structural steel which possess both high strength and high toughness and has particular application of cryogenic uses. The steel is produced by the utilization of thermally induced phase transformation following heating in a three-phase field in iron-rich alloys of the Fe-Ni-Ti system, with a preferred composition of 12% nickel, 0.5% titanium, the remainder being iron.

A transistor device is described in which an NPN semiconductor structure has a specially adapted N-type emitter zone and associated electrode. The emitter zone is produced by etching a cavity in one major surface of the semiconductor body followed by diffusion of N-type dopant material. Emitter, base and collector electrodes are then affixed to the appropriate surfaces of the body to provide electrical and thermal contact thereto.