In a semiconductor image sensor device comprising arrayed photo-sensors, a connection electrode used for connecting an external circuit or an aperture on the connection electrode is provided at an opposite side surface to an illuminated surface, and a transparent substrate is provided above the arrayed photo-sensors, whereby the distance between a light source and the photo-sensors can be reduced so as to improve sensitivity and resolving power.

A mesa region of a stripe geometry is formed by mesa-etching a surface of a GaAs crystal substrate, forming a crystal layer of higher resistivity than the abovementioned crystal substrate so as to fill the abovementioned mesa-etched recesses in a manner that the stripe shaped mesa region is buried in the higher resistivity regions making top faces of the mesa region and the higher resistivity regions flush with each other, then forming, on the abovementioned flush surface, several epitaxial grow...

The present invention relates to CCD area sensors. The object of the invention is to remove the problem which stems from the fact that the charge transfer function of the vertical CCD(6) restricts the performance of the CCD area sensor. According to the CCD area sensor of the present invention, the fundamental feature resides in that the clocked transfer electrode 3(Z to U) of the vertical CCD(6) are driven by dissimilar clock voltages in order to independently transfer the signal charge packets...

An all solidstate secondary battery comprising an oxide of layer structure represented by the formula serving as a cathode active material, lithim or a lithium alloy serving as a negative electrode active substance, and an oligoalkyleneoxypolyphosphazene polymer serving as an electrolyte, contains no solvent, is excellent in charge-discharge characteristics and usable with safety over a wide temperature range of from low to high temperatures.