Some embodiments of the invention provide vias that are not in shape of quadrilaterals. In some embodiments, some or all vias are in shape of non-quadrilateral polygons, such as octagons and hexagons. In some embodiments, some or all vias have a circular shape. Some embodiments provide a first set of vias that have a diamond shape and a second set of vias that have a rectangular shape. In some embodiments, a via can also be formed by a diamond contact and a rectangular contact. The diamond conta...

A wiring design tool which detects minimum area vias and replaces them with redundant vias pairs. The invention uses the definitions for single vias and tracks in a grid coordinate system and a file describing the design wires and their interconnections to select the most favorable direction for the placement. The invention accomplishes this by examining the directions one track away from each single via at various levels and according to the methodology of this invention, detects a possible sit...

Borderless vias are formed by depositing a hard dielectric mask layer on the upper surface of a lower metal feature and forming sidewall spacers on the side surfaces of the metal feature and mask layer. A dielectric interlayer is deposited and a misaligned through-hole formed therein by etching. The dielectric material of the sidewall spacer and dielectric material of the dielectric interlayer are different. The etchant employed to form the through-hole exhibits a high selectivity with respect t...

Borderless vias are formed by depositing a hard dielectric mask layer on the upper surface of a lower metal feature and forming sidewall spacers on the side surfaces of the metal feature and mask layer. A dielectric interlayer is deposited and a misaligned through-hole formed therein by etching. The dielectric material of the sidewall spacer and dielectric material of the dielectric interlayer are different. The etchant employed to form the through-hole exhibits a high selectivity with respect t...

Dense vias may be made with a metallizing composition containing tungsten, alumina, and either nickel or palladium. Further, an infiltration process ensures that vias in ceramic substrates are heremetic. Infiltrating materials, including metals and alloys, are applied to co-fired substrates and the composite is fired. The process may be repeated if necessary. Alternatively, the via holes may be bore-coated prior to infiltrating.

An improved phased-array active antenna transmit-receive means utilizing a multiplicity of individual transmit-receive cells positioned in an array format upon a common wafer of semiconductor material. Each transmit-receive cell, comprises a multiplicity of redundant, integrated circuit, electronic devices implanted upon the common semiconductor substrate. The transmit-receive cells utilize novel mitered mechanical switches to permanently interconnect individual electronic devices into either tr...

Sloped vias are formed in a resinous layer made from a material which is curable in stages, which can be coated on a substrate prior to partial curing, which adheres to the substrate and which shrinks upon full curing by a process which includes first using a dry, directional etch to form straight walled vias in a partially cured layer of the material coated on the substrate and then fully curing the layer. The straight walled vias are changed to sloped vias during final cure when adhesive conta...

A method is disclosed for measuring or verifying the size of an opening such as a via in a layer of material such as found in an integrated circuit structure which comprises measuring the voltage drop while flowing a known current across a given length of a first rectangular test portion comprising a continuous layer of a material capable of carrying an electrical current, then measuring the voltage drop while flowing the same known current across the same length of a second rectangular test por...

In the manufacture of integrated circuits, an undoped wide band-gap semiconductor is used for the insulating layer to isolate the silicon substrate from the metal interconnection pattern. To provide conductive vias through the insulating layer for connection to the source and drain of the transistors of the circuit, the wide band-gap semiconductor is implanted with a dopant selectively in the portion overlying the source and drain for making the implanted portion of low resistivity and of the co...

A glass reflow step to round off sharp edges of contact vias is typically included in processes for making integrated-circuit devices. In the course of making such devices with closely spaced vias, it has been found that unacceptable overhangs occur on the sidewalls of the vias. Neither changes in the composition of the glass nor modifications in the processing parameters of reflow were effective to avoid the overhang phenomenon. In accordance with the invention, it has been discovered that the ...