
An MOS dynamic random-access memory (RAM) realizable as a 64K RAM is disclosed. Single transistor cells employing capacitive storage are coupled to folded bit-line halves. These bit-line halves are connected to sense amplifiers employing cross-coupled transistors. Boosting means employing a variable capacitance are coupled to the bit-line halves to boost the potential on a line during reading. The capacitor associated with each of the memory cells is coupled to a potential which is greater than ...











