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The invention provides for a package for holding a crystal. The package preferably includes a ceramic base, ceramic top member and a plurality of metallization bands. The ceramic base and the ceramic top member may be cofired to seal the first portion of each of the metallization bands therein. The package additionally includes a seal ring engageable with the ceramic top member and a housing engageable with the seal ring to define a sealed crystal chamber. A plurality of ribbon bands are provide...
A method of growing a single-crystal on a single-crystal seed comprises deposition prior to the beginning of crystallization onto the surface of the single-crystal seed to be overgrown, of a continuous layer of a material having at least one of the characteristics of chemical composition and/or structure which differs from that of the material of the single-crystal seed, said product acquiring polarization properties under the influence of the single-crystal seed which are retained during crysta...
An apparatus for precisely slicing a crystal in a crystal face thereof, wherein the orientation of the crystal fixed to a specimen rest is measured in a crystal orientation identifying device by X-ray irradiation, the crystal is rotationally moved to a crystal slicing device which is located at a place separate from the crystal orientation identifying device and which has a cutting edge coplanar with an X-ray irradiation standard face of the crystal orientation identifying device, and the crysta...
A crystal oscillator comprises a crystal 1 and a crystal oscillator circuit 3 for providing an output signal 5. In order to adjust the output frequency, for example during the testing stage of production, a bank of load capacitors C1 to C6 are provided. Each capacitor C1 to C6 may be switched into or out of the circuit by a respective switch 9 to 19. The switches are controlled by control lines D0 to D5, which are set by a 6 bit register 21, known as the trim register. The value in the trim regi...
A photonic crystal comprises a plurality of elongated elements formed of a first dielectric material and arranged in a two-dimensional periodic honeycomb lattice. A second dielectric material surrounds the elongated elements and extending between them. The a second dielectric material defines between the elongated elements a plurality of spaces filled with a third dielectric material. The first dielectric material has permittivity that is greater than permittivity of the second dielectric materi...
Thermal stress at a point portion of a seed crystal generated when the seed crystal is brought into contact with molten silicon liquid is relieved, thereby to prevent generation of dislocation, to curtail the time of a seed contraction process and to surely support a heavy weight single crystal. A seed crystal of a silicon single crystal used when the single crystal is grown from molten silicon liquid by a Czochralski method is formed to show the heat emissivity of 0.5 or higher and lower than 1...
There is provided a diamond crystal in which the (111) oriented plane is of the diamond crystal synthesized on a substrate by a chemical vapor deposition method parallel to a substrate surface, and the area of the (111) oriented plane parallel to the substrate surface is 1/24 or less an area of the crystal on the substrate.
Mixtures of nematic-phase liquid-crystal materials that contain a sufficient amount of p-cyanobenzal-p'-n-butylaniline or the like, possibly together with other materials, will exhibit the nematic phase at about room temperature and over a considerable temperature range above and below, and at the same time, a positive dielectric anisotropy. This enables the production of a liquid-crystal unit comprising first and second pieces of flat glass, each coated on one side with a transparent electrocon...
A grown crystal structure comprises a single crystal of semiconductive material having a given lattice constant grown on a spinel crystal substrate having a different lattice constant. A substance is added to one or both of the crystals and has suitable properties relative to the crystals to effectively reduce lattice strains developed in the grown crystal structure due to mismatch of the lattice constants of both crystals.
An oscillator circuit including a flexural quartz crystal vibrator of the tuning fork type having an electromechanical coupling factor within the range of 2.5% to 3.5%. The vibrator is comprised of a quartz crystal element including a base portion and a pair of vibratable legs extending therefrom, and a pair of electrodes disposed on the quartz element for receiving alternating electrical signals of opposite polarity for effecting flexural vibration of the legs in response to the electrical sign...
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