An apparatus for depositing a coating on a substrate substantially eliminates the occurrence of oval defects by creating a heated tortuous path through which the source material vapors must travel before depositing on the substrate. In addition, shut-off valves for each of the source materials are positioned in the reaction chamber in close proximity to the substrate, thereby enabling layers of different compositions to be deposited with sharp transitions between adjacent layers. The apparatus m...

A method of forming a silicon carbide layer for use in integrated circuit fabrication processes is provided. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and a dopant in the presence of an electric field. The as-deposited silicon carbide layer has a compressibility that varies as a function of the amount of dopant present in the gas mixture during later formation.

In a sputtering apparatus, target particles to be deposited onto a substrate are selectively ionized relative to other particles in the deposition chamber. For example, titanium or titanium-containing target particles are selectively ionized, while inert particles, such as argon atoms, remain substantially unaffected. Advantageously, one or more optical ionizers, such as lasers, are used to create one or more ionization zones within the deposition chamber in which such selective ionization takes...

Apparatus for depositing sheets on a stack, which permits essentially free access to the stack and can be implemented with a low outlay of materials and costs. The apparatus includes on the side of the stack (1) that faces a machine, tongues (5, 6) with which frictional elements (3, 4) can be brought into and out of contact and which can be moved in the conveying direction (10) of the sheets (2) and in the opposite direction, and can be lowered onto the stack (1), and wherein on the side of the ...

A device for depositing synthetic cables into individual containers comprises a tubular cable feeder feeding a cable into a non-rotating receiver which accommodates four cable-transporting organs which transport cable spirals in an axial direction. The cable transporting organs are each coupled to a main shaft of the device by a belt, a vertical drive shaft carrying a worm meshed with a worm gear supported on a horizontal shaft which carries a disc cooperating with a pressure roller for feeding ...

An apparatus for individually depositing articles comprises a cylinder with a plurality of accommodating apertures, each of which is adapted to accommodate a single article only from a supply. The apparatus is adapted to retain the articles in the apertures and comprises nozzles for removing superfluous articles from the cylinder. Moreover, the apparatus is adapted to release the articles from the apertures. In order to secure that the articles are deposited one by one without any interruptions ...

An automatic banknote depositing apparatus has a housing (1) and a mechanism for transporting banknotes from an infeed opening to a cassette (11). The infeed opening is covered by one (14) of a plurality of insert devices when the apparatus is complete. The housing has a recess located adjacent the infeed opening to accommodate the insert device, which is provided with a plate (21) for bringing pressure to bear mechanically against banknotes, and a keyboard for controlling the apparatus. One of ...

A source for vapor depositing manganese onto a substrate in a vacuum. The source is formed by a chain of metallic beads fused around a wire. The material of the wire has a high recrystallization temperature, the beads consist of an alloy of manganese and one or more other substances from the group of metals and metalloids having a saturated vapor pressure much lower than that of manganese, and the fusion temperature of the alloy is lower than that of pure manganese and lower than the recrystalli...

An improved method for depositing material on substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.

A prior art method of depositing Germanium Carbide involves the use of glow discharge techniques which are problematic in that they require high substrate temperatures. Methods embodying the present invention comprise exposing a target of germanium to a plasma comprising an inert gas and a halocarbon gas. The plasma is maintained by means of a radio frequency magnetron electrode which is associated with the target. Atoms and ions of Germanium and Carbon are sputtered onto the substrate in order ...