A method of providing doped material on a substrate by chemical vapour deposition using a reactive gas. Variations in the doping level are obtained by displacing the doping source along a flow of non-reactive gas having a constant supply in order to vary the amounts of dopant converted to the vapour phase due to retrodiffusion of reactive vapours towards the doping source. Application to semiconductor devices in particular of the III-V type, especially for high-frequency devices.

Apparatus comprising a plurality of channels and a plurality of deposition units and methods for depositing fluids on a support are disclosed.

A processing method for depositing porous silica and doped silica films is provided. The method uses a cyclic scheme wherein each cycle comprises first codepositing silica with silicon, then selectively removing the silicon from the codeposit to form a porous structure. In a preferred embodiment, the codeposition is carried out by plasma enhanced chemical vapor deposition. After codeposition, the codeposit is exposed to a selective silicon removal reagent that can preferentially remove the silic...

A bill depositing/dispensing apparatus convenient to use and capable of readily adapting itself to operations to handle many denominations and/or a large number of bills or operations to sort and handle a small number of bills is to be provided. Storing boxes differing in the purpose of use including a deposit box, a first acceptance box with multi-compartments, a second acceptance box with multi-compartments, recycle boxes and a loading/recovering box are configured to have a common external sh...

A coherent material is formed on a substrate (10) by providing a precursor suspension (14) in which particulates are suspended in a carrier fluid, and directing the precursor suspension (14) at the substrate (10) from a first source (12). Generally contemporaneously with application of the deposited precursor suspension (14) to the surface, hot gases, e.g. hot gases produced by a flame (16), are directed at the substrate (10) from a remote second source (18) to fuse the particulates into the coh...

A vapor deposition apparatus and method in which pulse waveform light is applied to a sample sealed in a reaction chamber. The sample is exposed to gaseous material while the pulse waveform light is applied creating one or plural atomic layers. Alternate layers of plural substances or alternate multiple layers of plural substances can be formed by alternating the introduction of gaseous materials with the application of pulse waveform light.

A process for the deposition of copper on a support. The process includes bringing a copper precursor, in the vapor phase, into contact with a heated support, optionally in the presence of hydrogen. The copper precursor is in the form of a CuCl or CuBr composition in a nonaromatic, nonplanar and heteroatom-free liquid organic solvent which exhibits at least two nonconjugated unsaturations.

This invention relates to methods of depositing piezoelectric films such as in part of a stack including depositing a piezoelectric layer, measuring the thickness of the layer and depositing a further film or films such that the combined thickness is substantially equal to the target thickness.

A configuration for depositing media, particularly envelopes, transported in a franking and/or addressing machine standing on edge and butting against an inclined guide plate. The configuration is disposed downstream of the franking machine and includes a single-piece insert laterally attached and releasably coupled to the franking machine and an angled depositing box. A depositing box front wall is laterally and slidably coupled to the insert through a slit. The insert has a channel to receive ...

An apparatus for depositing a filament tow in a stationary can. To this end, the filament tow is conveyed to the can by a conveyance means which includes a pair of driven reels. For deposition into the can, the filament tow is guided in such a way that the feed position of the filament tow in the can constantly changes. To allow the filament tow to be deposited with a high filling density, for deposition into the can the filament tow is guided by two separate oscillating motions of the conveyanc...