A semiconductor switching device, which makes use of a hot electron emitter to give high speed operation, comprising a body (3) of intrinsic semiconductor material carried on a substrate (1) of n-type conductivity and a hot electron emitter (11, 13) which, when a bias potential is applied between the emitter and substrate, injects hot electrons into the body with a sufficient energy to generate electron-hole pairs in the body by collision of injected electrons with valence electrons. The device ...











