A predetermined pattern of a dielectric polymer is formed on a substrate from a prepolymer which is an ether of the oligomeric condensation product of a dihydric phenol and formaldehyde having the formula ##STR1##

A predetermined pattern of a dielectric polymer is formed on a substrate from a mixture of prepolymers which are the ethers of the oligomeric condensation product of (a) dihydric phenol and formaldehyde and (b) a dialdehyde and 3 to 4 moles of a phenol.

A predetermined pattern of a dielectric polymer is formed on a substrate from a mixture of prepolymers which are the ethers of the oligomeric condensation product of (a) dihydric phenol and formaldehyde and (b) a dialdehyde and 3 to 4 moles of a phenol.

A dielectrics dividing wafer is disclosed in which embedded dielectric films are provided in the interior of the wafer in a predetermined pattern extending laterally parallel to a face surface of the wafer, and partition dielectric films, in the form of vertical walls extending from the face surface and the rear surface of the wafer, to the embedded dielectric films, are provided to define semiconductor areas extending continuously from the face surface of the wafer to the rear surface of the wa...

A predetermined pattern of a dielectric polymer is formed on a substrate from a prepolymer which is an ether of the reaction product of a dicyclopentadiene and a phenol.

A composition for producing ceramic dielectrics which comprises: a mixture of barium titanate which has average particle size of 0.1-1.5 .mu.m is amounts of 98-60 mole % and a perovskite type barium titanate solid solution which has average particle size of 0.1-1.5 .mu.m and a Curie temperature of 50.degree.-115.degree. C. in amounts of 2-40 mole %; and (A) at least one of niobium oxides and tantalum oxides in amounts of 0.3-2 moles % in relation to 100 mole % of the mixture; and (B) at least on...

A plasma-deposited silicon compound thin film dielectric for use in a thin film capacitor. The film is produced in a high frequency glow discharge with a substrate heated to a temperature in excess of 50.degree. C. A thin film capacitor using such a film has a lower dissipation factor and a reduced tendency to age.

A low firing dielectric composition containing an admixture of finely divided particles of manganese doped-lead iron-tungsten niobate, barium titanate and optionally an inorganic sintering aid, dispersed in an organic medium. This composition is useful for forming capacitors.

A predetermined pattern of a dielectric polymer is formed on a substrate from a mixture of prepolymers which are ethers of the reaction products of (a) a dicyclopentadiene and a phenol and (b) a dialdehyde and 3 to 4 moles of a phenol.

A solution for electrochemical metallization of dielectrics comprising a salt of copper, a phosphorus-containing salt, a stabilizing agent and water which contains, as the phosphorus-containing salt, a salt of hypophosphorous acid, the components being employed in the following proportions, g/l: copper salt: 35 to 350 hypophosphorous acid salt: 35 to 400 stabilizing agent: 0.004 to 250 water: up to 1 liter. A process for electrochemical metallization of dielectrics involving preparation of the d...