A method of fabrication of preforms for manufacturing of optical fibers based on surface plasma wave chemical vapor deposition (CVD) is proposed. A surface plasma wave of either the symmetric E.sub.01 or the hybrid HE.sub.11 type is excited on the outside surface of a dielectric starting body. The plasma leads to a CVD of doped or undoped silica layers to obtain the preform. The advantages of the method are the absence of any moving parts in the machinery, high deposition rates, minimal precurso...

A sinterable ceramic composition which comprises a barium titanate based dielectric precursor powder which has a temperature coefficient of capacitance, TC, of .+-.15% over the temperature range -55.degree. to 125.degree. C., in admixture with from 0.25 to 2.0% by weight of an additive which is selected from the group consisting of ZrSiO.sub.4, Al.sub.2 O.sub.3, SiO.sub.2, precursors therefor and mixtures thereof, the composition having an average particle size in the range of from 0.6 to 0.8 mi...

Molds for use in making end moldings for high-voltage cables are described wherein the dielectric insulator of a cable is heated and molded to conform to a desired shape. As a consequence, high quality substantially bubble-free cable connectors suitable for mating to premanufactured fittings are made.

The present invention provides compositions of high frequency dielectric ceramics represented by the following formula: wherein 0.ltoreq.x.ltoreq.0.99; and 0.4.ltoreq.y.ltoreq.0.9. The compositions have a dielectric constant of about 28 to about 60, Qxf.sub.0 (GHz) of about 25,000 to about 71,000 and a temperature coefficient of the resonant frequency of about -56 to about 84 ppm/.degree. C. The compositions may be applied to various communications systems which require high frequency dielectric...

A polishing method for single crystal dielectrics such as sapphire and magnesium spinel is disclosed. A single crystal wafer of sapphire or magnesium spinel is immersed in a mixture of sulphuric and phosphoric acid in a range of mixtures of 9 parts sulphuric acid to 1 part phosphoric acid to 1 part sulphuric acid to 9 parts phosphoric acid by volume while the mixture is held at a temperature in the range of 200.degree.-325.degree.C. The rate of polishing as well as the quality of polishing of th...

A method for metallizing dielectrics includes applying a photosensitive dielectric to a substrate. The dielectric is then exposed to light through a mask, is seeded with a metal and is subjected to a temperature treatment. Afterwards, the dielectric is chemically metallized. Alternatively, the dielectric can be first be seeded with a metal after being applied to the substrate, and can then be exposed to light through a mask. Afterwards, excess seeding material is removed and the dielectric is ch...

An integrated circuit having an electrically insulating layer of an electrically nonconductive material, where the electrically insulating layer is disposed between at least two electrically conductive elements. The electrically nonconductive material is selected from a group of materials having a k value that decreases when subjected to thermal treatment. The electrically nonconductive material is most preferably a boro siloxane.

A temperature compensating composition for ceramic dielectrics comprising La.sub.2 O.sub.3 --TiO.sub.2 --CaO--MgO based composite as a main component and ZrO.sub.2 as an additive respectively sintered. As the composition is very fine in grain size, it is a very suitable raw material for such a product as a layer-built capacitor which is used in a high electric field.

A composition for ceramic dielectrics comprising BaO, CeO.sub.2, ZrO.sub.2, CaO and TiO.sub.2 in sintered state. The composition can also contain at least one of MnO.sub.2, Cr.sub.2 O.sub.3, FeO, NiO, and CoO as additive. As the composition is very fine in grain size, and has a prolonged life, it is very suitable for a raw material of such a product as a layer-built capacitor which is used in high electric field.

Disclosed is an apparatus which is resistant to electrical breakdown consisting of a chamber containing electrodes separated by dielectric gas supersaturated with the vapor from a dielectric liquid.