A method for producing ceramic dielectrics containing a water soluble metal acid or salt includes making a mixture by kneading a water soluble metal acid or salt, particulates, sintering auxiliaries and water, mixing the mixture with a binder and plasticizer to form a slurry, and forming a sheet from the slurry by drying and sintering.

Provided are methods for fabricating hardened composite thin layer gate dielectrics. According to preferred embodiments of the present invention, composite gate dielectrics may be produced as bilayers having oyxnitride portions with nitrogen contents above 10 atomic percent, while avoiding the drawbacks of prior art nitridization methods. In one aspect of the present invention, a hardened composite thin layer gate dielectric may be formed by deposition of a very thin silicon layer on a very thin...

An integrated circuit with an intermetal level dielectric (IMD) including an organic-silica hybrid (110) and located between metal lines (104).

Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is formed as a structure of one or more monolayers, and methods of fabricating such dielectric layers provide an insulating layer in a variety of structures for use in a wide range of electronic devices.

An improved method of forming an inter-metal dielectric layer on a semiconductor substrate is described. A plurality of conductive lines is formed on the substrate wherein an gap is simultaneously formed between every two conductive lines to expose a part of the substrate. A conformal first dielectric layer is formed on the plurality of conductive lines and the exposed substrate. A spin-coating material layer is formed in the gap wherein the first dielectric layer on top of the plurality of cond...

A method for improving high-.kappa. gate dielectric film (104) properties. The high-.kappa. film (104) is subjected to a two step anneal sequence. The first anneal is performed in a reducing ambient (106) with low partial pressure of oxidizer to promote film relaxation and increase by-product diffusion and desorption. The second anneal is performed in an oxidizing ambient (108) with a low partial pressure of reducer to remove defects and impurities.

A dielectric film containing HfAlO.sub.3 and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO.sub.2. A gate dielectric is formed by atomic layer deposition employing a hafnium sequence and an aluminum sequence. The hafnium sequence uses HfCl.sub.4 and water vapor. The aluminum sequence uses either trimethylaluminium, Al(CH.sub.3).sub.3, or DMEAA, an adduct of alane (AlH.sub.3) and dimethylehty...

A dielectric layer containing a hafnium tantalum oxide film and a method of fabricating such a dielectric layer produce a dielectric layer for use in a variety of electronic devices. Embodiments include structures for capacitors, transistors, memory devices, and electronic systems with dielectric layers containing a hafnium tantalum oxide film structured as one or more monolayers.

Nonreducible partially crystallized crossover dielectrics in electronic devices consisting essentially of certain glasses which have been fired and comprise crystals dispersed in a glassy matrix.

Cracking of gap fill dielectric material in open fields bordering a dense array of conductive features on subsequent thermal processing is significantly reduced or avoided by etching to remove all or a portion of the dielectric material in the open field except for sidewall spacers on bordering metal features. Embodiments also include removing dielectric material from an upper surface of a metal feature having a surface area in excess of about 100 microns.sup.2 to avoid cracking on subsequent th...