This is a method of forming mechanically robust vias and entrenched conductors on a dielectric layer (which dielectric layer is on an electronic microcircuit substrate which vias and entrenched conductors are electrically connected to a conductive area on the surface of the substrate) and a structure formed thereby. Generally some of the dielectric layers added above the microcircuit comprise a porous dielectric having a desirable low dielectric constant but low mechanical robustness. Special me...

An ultra-large scale integrated circuit is manufactured by using silicon-based, low dielectric materials on a wafer in which the hydrophobic nature of the dielectric materials is improved by relative low temperature heating in a vacuum or inert atmosphere, slowly increasing the wafer temperature to the hard bake temperature at a predetermined ramp rate, and heating the wafer at the hard bake temperature for a predetermine amount of time. As a result, the dielectric material can repel wet etch ch...

End moldings for high-voltage cables are described wherein the dielectric insulator of the cable is heated and molded to conform to a desired shape. As a consequence, high quality substantially bubble-free cable connectors suitable for mating to premanufactured fittings are made. Disclosed is a method for making the cable connectors either in the field or in a factory, molds suitable for use with the method, and the molded cable connectors, themselves.

A differentiable ablation approach to patterning dielectrics which are not of the same absorbance uses an absorbant dielectric at a specified laser wavelength over a non-absorbant dielectric at that wavelength. The absorbant dielectric may be laser-patterned and become an integral mask enabling plasma etching of the underlying non-absorbant dielectric. If the patterning of the absorbant dielectric involves vias, polymer ridges formed around via surfaces during laser patterning may be removed at ...

The invention is directed to a laminate for the preparation of printed circuits by electroless plating of conductive metal thereon which comprises a. an electrically insulative substrate bearing b. an adherent layer of crosslinked polymeric adhesive, which is insoluble in photodielectric developing solutions, having partially embedded therein finely divided particles of adsorbent which protrude from the adhesive surface away from the substrate, the protrusive surfaces of which are adsorptive wit...

Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity aluminum oxide layer. A dopant material is embedded in the pores of the porous aluminum oxide layer and subsequently converted to a dielectric form. The degree of porosity of the porous aluminum oxide layer may be controlled during formation to facilitate contro...

Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be...

Dielectric layers containing a lanthanum hafnium oxide layer, where the lanthanum hafnium oxide layer is arranged as a structure of one or more monolayers, provide an insulating layer in a variety of structures for use in a wide range of electronic devices.

Methods for forming an oxynitride dielectric in a semiconductor device are disclosed. In the method, an oxynitride layer is grown on a semiconductor device. The oxynitride layer is then annealed at a temperature of about 400.degree. C. for about 20 minutes. Further, the annealing may be performed in a nitrogen ambient or a nitrogen ambient including an oxygen concentration of less than about 1 to about 10 parts per billion.

The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: ##STR00001## wherein n=5 to 10000 and monovalent Ar.sub.1 and divalent Ar.sub.2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to: ##STR00002##