An article of manufacture comprising a dielectric material on a microelectronic device, such as an integrated circuit, wherein the dielectric material contains a poly(arylene ether) polymer comprising a repeat unit of the structure: ##STR1## wherein m=0 to 1.0; and n=1.0-m; and Ar.sub.1, Ar.sub.2, Ar.sub.3 and Ar.sub.4 are individually divalent arylene radicals, but Ar.sub.1, Ar.sub.2, Ar.sub.3 and Ar.sub.4, other than a diradical 9,9-diphenylfluorene, cannot be isomeric equivalents.

The disclosure describes dielectrics for a transfer sheet carrying member used in electrophotographic image forming apparatus, comprising 80 to 96 mass % of a vinylidene fluoride-based resin and 4 to 20 mass % of a methyl methacrylate-based resin.

A method of manufacturing large-sized laminated dielectrics of high quality which permit adjustment of the atmosphere during sintering process to be accomplished easily, and which can eliminate the problems such as expansion due to reaction with the atmosphere gas. When a laminated body 1, consisting of oxide dielectric layers 2 and inner electrode layers 3 having a base metal such as Cu as a main component, is sintered in a reducing atmosphere, a mixed gas having CO.sub.2 gas as a main componen...

Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity aluminum oxide layer. A dopant material is embedded in the pores of the porous aluminum oxide layer and subsequently converted to a dielectric form. The degree of porosity of the porous aluminum oxide layer may be controlled during formation to facilitate contro...

An embodiment of the invention is a metal layer 14 of a back-end module 6 where the height of the interconnects 17 is greater than the height of the dielectric regions 20. Another embodiment of the invention is a method of fabricating a semiconductor wafer 4 where the height of the interconnects 17 is greater than the height of the dielectric regions 20.

Techniques for determining the composition of mixed dielectric layers are disclosed.

An in-situ ultra dilute ammonia nitridation process and apparatus of the following ultra-thin chemically tailored gate dielectrics: DCE/O.sub.2 (Trans 1,2-Dichloroethylene) based ultra-thin gate dielectric; Nitric Oxide (NO) based ultra-thin gate dielectric that has been re-oxidized via a DCE/O.sub.2 (Trans 1,2-Dichloroethylene) process; "dry-wet" DCE (Trans 1,2-Dichloroethylene)/O2-H2O/O2) based ultra-thin gate dielectric; and ultra dilute, less than 1E-7 moles NH.sub.3 /mm.sup.2, nitridation o...

The ultraviolet absorption characteristics of a polymer material are modified by the addition of an ultraviolet absorbing dye to render it laser ablatable at a frequency at which the unmodified material is substantially non-laser ablatable.

Powders of BaCO.sub.3, TiO.sub.2, ZnO, etc. are mixed to each other at a predetermined ratio of quantity, calcined in an atmospheric air at 90.degree.-120.degree. C., and pulverized to obtain a calcined powder having an average grain size from 1 to 3 .mu. m. 0.1 to 20 parts-by weight of a powder having an average grain size from 0.1 to 1.5 .mu.m comprising a glass having a transition point of not higher than 450.degree. C. obtained by mixing powders of Pb.sub.3 O.sub.4, SiO.sub.2, Na.sub.2 O, et...

The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: ##STR00001## wherein n=5 to 10000 and monovalent Ar.sub.1 and divalent Ar.sub.2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to: ##STR00002##