The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: ##STR00001## wherein n=5 to 10000 and monovalent Ar.sub.1 and divalent Ar.sub.2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to: ##STR00002##

The present invention relates to poly(arylene ethers) used as low k dielectric layers in electronic applications and articles containing such poly(arylene ethers) comprising the structure: ##STR1## wherein n=5 to 10000 and monovalent Ar.sub.1 and divalent Ar.sub.2 are selected from a group of heteroaromatic compounds that incorporate O, N, Se, S, or Te or combinations of the aforesaid elements, including but not limited to: ##STR2##

Doped aluminum oxide layers having a porous aluminum oxide layer and methods of their fabrication. The porous aluminum oxide layer may be formed by evaporation physical vapor deposition techniques to facilitate formation of a high-purity aluminum oxide layer. A dopant material is embedded in the pores of the porous aluminum oxide layer and subsequently converted to a dielectric form. The degree of porosity of the porous aluminum oxide layer may be controlled during formation to facilitate contro...

The invention is directed to a laminate for the preparation of printed circuits by electroless plating of conductive metal thereon which comprises a. an electrically insulative substrate bearing b. an adherent layer of crosslinked polymeric adhesive, which is insoluble in photodielectric developing solutions, having partially embedded therein finely divided particles of adsorbent which protrude from the adhesive surface away from the substrate, the protrusive surfaces of which are adsorptive wit...

Non-linear optical materials, i.e., those optical materials whose indices refraction depend on input radiation intensity, are few and of low non-linearities; this invention uses various metallic patterns on a transparent substrate, with non-linear elements between parts of the patterns, to function as an artificial dielectric. These elements may take the form of metal-oxide-metal tunnel diodes, Schottky diodes, p-n junction diodes, superlattice structures, and non-linear capacitors.

The present invention provides ceramic dielectrics for use in electronic components and the subsequent methods of forming them. In the ceramic dielectrics, CaTiO.sub.3 or MgTiO.sub.3 and/or SrTiO.sub.3 are incorporated in a Ba(Zn.sub.1/3, Ta.sub.2/3)O.sub.3 -base or a Ba(Mg.sub.1/3, Ta.sub.2/3)O.sub.3 -base ceramics. In addition, SiO.sub.2 and/or B.sub.2 O.sub.3, MnO and/or ZnO may be added as additives. The ceramic dielectrics have large unloaded Q-value and high relative dielectric constant, a...

A new class of low cost microwave/millimeter wave dielectric couplers are sclosed. In one embodiment, the waveguides to be coupled are formed of bundles of dielectric fibers and coupling is achieved by having a certain percentage of the dielectric fibers crossover between the waveguide bundles. In a second embodiment, the waveguides are formed of stacked longitudinal dielectric lamination sheets and coupling is achieved by crossing over a certain number of the laminate sheets from one waveguide ...

A method for separating a joined substrate type wafer, which wafer is composed of a pair of semiconductor substrates joined through an insulation film, utilizes dielectrics through simple processing steps. Trenches for separating a semiconductor substrate with dielectrics are dug from the surface of the substrate and a dielectrics film is deposited on the surface of the substrate including the trenches. Then poly-crystalline silicon under layer is grown by CVD method to a thickness of about 0.5 ...

A method for separating a joined substrate type wafer, which wafer is composed of a pair of semiconductor substrates joined through an insulation film, utilizes dielectrics through simple processing steps. Trenches for separating a semiconductor substrate with dielectrics are dug from the surface of the substrate and a dielectrics film is deposited on the surface of the substrate including the trenches. Then poly-crystalline silicon is grown by CVD to a thickness of about 0.5 .mu.m, which is dee...

A semiconductor device is disclosed that includes: a substrate; a first high-k dielectric layer; a second high-k dielectric layer formed of a different high-k material; and a metal gate. In another form, a method of forming a semiconductor device is disclosed that includes: providing a substrate; forming a first high-k dielectric layer above the substrate; forming a second dielectric layer of a different high-k material above the first dielectric layer; and forming a gate structure above the sec...