A method is described which permits electrolytic oxidation of semiconductor samples with contact metallization in place. An anodizable metal such as Al, Ni, Ta, Ti, Zn or alloys including such metal is deposited over the contacts. During electrolytic oxidation, the oxide formed over the metal closes off shunting paths which would normally exist through the contacts and thereby permits a native oxide to grow into the exposed surface of the semiconductor. The oxide formed over the metal can be eas...











