
Dummy information of a third level, which is between first and second levels written in a plurality of memory cells, is written in a dummy memory cell from a source node through transistors. Thus, a potential difference is caused between a read bit line and a dummy read bit line in reading. A potential comparison circuit indicates the level of information read from any memory cell on the basis of the comparison result as to the potentials of the dummy read bit line and the read bit line. Thus, t...











